IRF7754GTRPBF International Rectifier, IRF7754GTRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7754GTRPBF
• Description: MOSFET P-CH DUAL 12V 5.5A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7754GTRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1984pF @ 6V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 5.5 A
• Power Dissipation: 1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7754GTRPBFTR

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0.01
100
100
0.1
0.1
10
10
1
Fig 1. Typical Output Characteristics
1
Fig 3. Typical Transfer Characteristics
1.0
0.1
T = 150 C
-V
J
1.2
-V DS , Drain-to-Source Voltage (V)
GS
, Gate-to-Source Voltage (V)
°
1
1.4
-1.0V
T = 25 C
20µs PULSE WIDTH
Tj = 25°C
J
V
20µs PULSE WIDTH
1.6
°
DS
10
= -10V
TOP
BOTTOM -1.0V
1.8
VGS
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-7.0V
2.0
100
100
0.1
10
1
2.0
1.5
1.0
0.5
0.0
0.1
-60 -40 -20
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I =
D
-5.5A
-V DS , Drain-to-Source Voltage (V)
T , Junction Temperature ( C)
J
IRF7754GPbF
Vs. Temperature
0
1
20 40 60 80 100 120 140 160
-1.0V
20µs PULSE WIDTH
Tj = 150°C
10
TOP
BOTTOM -1.0V
V
GS
°
=
VGS
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-7.0V
-4.5V
3
100