2N7002DW L6327 Infineon Technologies, 2N7002DW L6327 Datasheet
2N7002DW L6327
Specifications of 2N7002DW L6327
Related parts for 2N7002DW L6327
2N7002DW L6327 Summary of contents
Page 1
OptiMOS Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 Type Package 2N7002DW PG-SOT363 H6327: ...
Page 2
Parameter Thermal characteristics Thermal resistance, 2) junction - minimal footprint Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance 2) 2 Perfomed on a 40x40mm FR4 PCB ...
Page 3
Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...
Page 4
Power dissipation =f tot A 0.5 0.4 0.3 0.2 0 Safe operating area =f =25 ° parameter limited by on-state ...
Page 5
Typ. output characteristics =f =25 ° parameter 0 0.5 4.5 V 0.4 0.3 0.2 0 Typ. transfer characteristics =f(V ...
Page 6
Drain-source on-state resistance = DS(on 6.0 5.0 4 3.0 2.0 1.0 0.0 -60 - Typ. capacitances C =f ...
Page 7
I =f parameter: T J(start 125 ° Drain-source breakdown voltage =f =250 µA V ...
Page 8
Package Outline: Footprint: Rev.2.2 SOT363 Packing: page 8 2N7002DW 2011-06-16 ...
Page 9
... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...