AO6601 Alpha & Omega Semiconductor Inc, AO6601 Datasheet

MOSFET N/P-CH COMPL 30V 6-TSOP

AO6601

Manufacturer Part Number
AO6601
Description
MOSFET N/P-CH COMPL 30V 6-TSOP
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO6601

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.4A, 2.3A
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
4.34nC @ 4.5V
Input Capacitance (ciss) @ Vds
390pF @ 15V
Power - Max
1.15W
Mounting Type
Surface Mount
Package / Case
6-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1076-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO6601
Manufacturer:
AOS
Quantity:
1 730
Part Number:
AO6601
Manufacturer:
ALPHA
Quantity:
2 895
Part Number:
AO6601
Manufacturer:
TI
Quantity:
3 123
Part Number:
AO6601
Manufacturer:
AOS
Quantity:
310
Part Number:
AO6601
Manufacturer:
AOS/万代
Quantity:
20 000
Company:
Part Number:
AO6601
Quantity:
17 277
Part Number:
AO6601L
Manufacturer:
AOS/ 万代
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
AO6601
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO6601/L uses advanced trench technology to
provide excellent R
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
AO6601 and AO6601L are electrically identical.
-RoHS Compliant
-AO6601L is Halogen Free
A
DS(ON)
G1
S2
G2
B
T
T
T
T
Top View
A
A
A
A
TSOP6
=25°C
=70°C
=25°C
=70°C
and low gate charge. The
1
2
3
C
6
5
4
A
A
A
D1
S1
D2
=25°C unless otherwise noted
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
n-channel
G1
Symbol
Features
n-channel
V
I
R
< 60mΩ
< 75mΩ
< 115mΩ
D
Max n-channel
R
R
DS
DS(ON)
= 3.4A
θJA
θJL
-55 to 150
(V) = 30V
D1
S1
1.15
0.73
±12
3.4
2.7
30
30
(V
(V
(V
(V
GS
GS
GS
GS
Typ
106
= 4.5V)
= 10V)
78
64
= 10V)
= 2.5V)
p-channel
G2
< 135mΩ
< 185mΩ
< 265mΩ
-30V
-2.3A
Max p-channel
p-channel
Max
110
150
D2
S2
-55 to 150
80
(V
1.15
0.73
±12
-2.3
-1.8
-30
-30
GS
(V
(V
(V
= -10V)
GS
GS
GS
= -10V)
= -4.5V)
= -2.5V)
www.aosmd.com
Units
°C/W
°C/W
°C/W
Units
°C
W
V
V
A

Related parts for AO6601

AO6601 Summary of contents

Page 1

... AO6601 Complementary Enhancement Mode Field Effect Transistor General Description The AO6601/L uses advanced trench technology to provide excellent R and low gate charge. The DS(ON) complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. AO6601 and AO6601L are electrically identical. -RoHS Compliant ...

Page 2

... AO6601 n-channel MOSFET Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO6601 n-channel typical characteristics TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10V (Volts) DS Fig 1: On-Region Characteristics 150 125 V =2.5V GS 100 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 150 100 (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd 2.5V ...

Page 4

... AO6601 n-channel typical characteristics TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =15V DS I =3. (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) 10.0 limited 0.1s 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA J, =110°C/W θJA 1 0.1 0.01 0.00001 0.0001 Alpha & ...

Page 5

... AO6601 p-channel MOSFET Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 6

... AO6601 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 -10V (Volts) DS Fig 1: On-Region Characteristics 250 225 200 175 150 125 100 Figure 3: On-Resistance vs. Drain Current and Gate Voltage 350 300 250 200 150 100 (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. ...

Page 7

... AO6601 p-channel typical characteristics TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =-15V DS I =-2. (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) T =25°C A 10.0 R DS(ON) limited 0.1s 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA J,PK ...

Related keywords