UPA1870BGR-9JG-E2-AT

To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1870B is a switching device which can be driven directly by a 2.5 V power source. The PA1870B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such ...

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA 1000 R Limited ...

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 25 Pulsed 0.1 0.2 0 Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE ...

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 2 Pulsed 125°C A 75°C 25°C 30 25° 0.01 0 Drain Current - A D DRAIN TO ...

SOURCE TO DRAIN FORWARD VOLTAGE 100 Pulsed 10 1 0.1 0.01 0.4 0.6 0 Source to Drain Voltage - V F(S-D) 6 1.0 1.2 Data Sheet G16741EJ1V0DS PA1870B ...

The information in this document is current as of October, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date ...