UPA2756GR-E2-AT Renesas Electronics America, UPA2756GR-E2-AT Datasheet

UPA2756GR-E2-AT
Manufacturer Part Number	UPA2756GR-E2-AT
Description	MOSFET N-CH DUAL 60V 8-SOIC
Manufacturer	Renesas Electronics America
UPA2756GR-E2-AT datasheets	1. UPA2756GR-E1-AT.pdf (9 pages)

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Specifications of UPA2756GR-E2-AT
Fet Type	2 N-Channel (Dual)	Fet Feature	Logic Level Gate
Rds On (max) @ Id, Vgs	105 mOhm @ 2A, 10V	Drain To Source Voltage (vdss)	60V
Current - Continuous Drain (id) @ 25° C	4A	Vgs(th) (max) @ Id	2.5V @ 1mA
Gate Charge (qg) @ Vgs	6nC @ 10V	Input Capacitance (ciss) @ Vds	260pF @ 10V
Power - Max	2W	Mounting Type	Surface Mount
Package / Case	*	Lead Free Status / RoHS Status	Lead free / RoHS Compliant

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To our customers,

Old Company Name in Catalogs and Other Documents

On April 1

, 2010, NEC Electronics Corporation merged with Renesas Technology

Corporation, and Renesas Electronics Corporation took over all the business of both

companies. Therefore, although the old company name remains in this document, it is a valid

Renesas Electronics document. We appreciate your understanding.

Renesas Electronics website: http://www.renesas.com

Issued by: Renesas Electronics Corporation (http://www.renesas.com)

Send any inquiries to http://www.renesas.com/inquiry.

April 1

, 2010

Renesas Electronics Corporation

Download datasheet (267Kb)

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UPA2756GR-E2-AT Summary of contents
Page 1 To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ... Page 2 All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ... Page 3 DESCRIPTION µ The PA2756GR is Dual N-channel MOS Field Effect Transistor designed for switching applications. FEATURES • Low on-state resistance R = 105 mΩ MAX DS(on 150 mΩ MAX 4.0 ... Page 4 ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ... Page 5 TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 140 160 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA ... Page 6 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 20 Pulsed 4 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1 Drain to Source Voltage - V DS ... Page 7 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 200 180 Pulsed 160 140 120 100 -50 - 100 125 ... Page 8 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 4 Ω 20→ Starting T = 25°C ch 0.1 µ µ 10 ... Page 9 The information in this document is current as of January, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

UPA2756GR-E2-AT Summary of contents

Page 1
To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
Page 2
All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
Page 3
DESCRIPTION µ The PA2756GR is Dual N-channel MOS Field Effect Transistor designed for switching applications. FEATURES • Low on-state resistance R = 105 mΩ MAX DS(on 150 mΩ MAX 4.0 ...
Page 4
ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...
Page 5
TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 140 160 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA ...
Page 6
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 20 Pulsed 4 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1 Drain to Source Voltage - V DS ...
Page 7
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 200 180 Pulsed 160 140 120 100 -50 - 100 125 ...
Page 8
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 4 Ω 20→ Starting T = 25°C ch 0.1 µ µ 10 ...
Page 9
The information in this document is current as of January, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

UPA2756GR-E2-AT

UPA2756GR-E2-AT

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UPA2756GR-E2-AT Summary of contents

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