IRF7342QTRPBF International Rectifier, IRF7342QTRPBF Datasheet
IRF7342QTRPBF
Specifications of IRF7342QTRPBF
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IRF7342QTRPBF Summary of contents
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Advanced Process Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free Description ® These HEXFET Power MOSFET Dual SO-8 package utilize the lastest processing techniques to achieve extremely ...
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IRF7342QPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs DSS Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q Total Gate ...
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VGS TOP -15V -12V -10V -8.0V -6.0V -4.5V -4.0V -3.5V BOTTOM -3.0V 10 -3.0V 1 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS 100 ° ...
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IRF7342QPbF 2.0 -3 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature ( C) J 0.45 0. 0.15 0. ...
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1MHz iss rss 960 oss iss 720 480 C oss 240 C rss ...
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IRF7342QPbF SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING ...
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SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...