IRF7342QTRPBF International Rectifier, IRF7342QTRPBF Datasheet

MOSFET P-CH DUAL 55V 8-SOIC

IRF7342QTRPBF

Manufacturer Part Number
IRF7342QTRPBF
Description
MOSFET P-CH DUAL 55V 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7342QTRPBF

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
105 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
3.4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7342QTRPBFCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7342QTRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7342QTRPBF
Quantity:
3 190
Description
Absolute Maximum Ratings
Thermal Resistance
These HEXFET
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to
make this design an extremely efficient and reliable device
for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available
www.irf.com
R
V
I
I
I
P
P
V
V
E
dv/dt
T
D
D
DM
J,
DS
D
D
GS
GSM
AS
θJA
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
Dual P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
@T
@T
T
STG
C
C
C
C
= 25°C
= 70°C
= 25°C
= 70°C
in Tape & Reel.
®
Power MOSFET's in a Dual SO-8 package
Maximum Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G2
G1
S2
S1
1
2
3
4
Top View
Typ.
IRF7342QPbF
–––
HEXFET
8
7
6
5
-55 to + 150
Max.
0.016
D1
D1
D2
-3.4
-2.7
± 20
114
D2
-55
-27
2.0
1.3
5.0
30
SO-8
®
R
DS(on)
Power MOSFET
V
Max.
62.5
DSS
= 0.105Ω
PD - 96109A
= -55V
Units
Units
W/°C
°C/W
V/ns
°C
V
A
V
V
1

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IRF7342QTRPBF Summary of contents

Page 1

Advanced Process Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free Description ® These HEXFET Power MOSFET Dual SO-8 package utilize the lastest processing techniques to achieve extremely ...

Page 2

IRF7342QPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs DSS Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q Total Gate ...

Page 3

VGS TOP -15V -12V -10V -8.0V -6.0V -4.5V -4.0V -3.5V BOTTOM -3.0V 10 -3.0V 1 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS 100 ° ...

Page 4

IRF7342QPbF 2.0 -3 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature ( C) J 0.45 0. 0.15 0. ...

Page 5

1MHz iss rss 960 oss iss 720 480 C oss 240 C rss ...

Page 6

IRF7342QPbF SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING ...

Page 7

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...

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