MOSFET DUAL N-CH 20V 2.4A MICRO8

IRF7501TR

Manufacturer Part NumberIRF7501TR
DescriptionMOSFET DUAL N-CH 20V 2.4A MICRO8
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF7501TR datasheet
 


Specifications of IRF7501TR

Fet Type2 N-Channel (Dual)Fet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs135 mOhm @ 1.7A, 4.5VDrain To Source Voltage (vdss)20V
Current - Continuous Drain (id) @ 25° C2.4AVgs(th) (max) @ Id700mV @ 250µA
Gate Charge (qg) @ Vgs8nC @ 4.5VInput Capacitance (ciss) @ Vds260pF @ 15V
Power - Max1.25WMounting TypeSurface Mount
Package / CaseMicro8™Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRF7501TR
IRF7501
IRF7501CT
  
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Next
Generation V Technology
Ulrtra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is
at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable electronics and
PCMCIA cards.
Absolute Maximum Ratings
Parameter
V
Drain-Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
I
Pulsed Drain Current
DM
P
@T
= 25°C
Maximum Power Dissipation
D
A
P
@T
= 70°C
Maximum Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage Single Pulse tp<10µs
GSM
V
Gate-to-Source Voltage
GS
dv/dt
Peak Diode Recovery dv/dt
TJ , TSTG
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambient
JA
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
www.irf.com
PRELIMINARY
HEXFET
1
8
S 1
2
7
G 1
3
6
S 2
4
5
G 2
T o p V ie w
@ 10V
GS
@ 10V
GS
-55 to + 150
240 (1.6mm from case)
PD - 91265H
IRF7501
®
Power MOSFET
D 1
V
=20V
DSS
D 1
D 2
D 2
R
= 0.135
DS(on)
M icro 8
Max.
Units
20
V
2.4
1.9
A
19
1.25
W
0.8
W
0.01
W/°C
16
V
± 12
V
5.0
V/ns
°C
Max.
Units
100
°C/W
1
4/30/98

IRF7501TR Summary of contents

  • Page 1

    ... Available in Tape & Reel Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

  • Page 2

    IRF7501 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

  • Page 3

    VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V 10 BOTTOM 1.5V 1 0.1 1.5V 20µ 25°C J 0.01 0 rain-to-Source V oltage (V) D ...

  • Page 4

    IRF7501 2 1.7A D 1.5 1.0 0.5 0.0 -60 -40 - Junction T em perature (° Fig 5. Normalized On-Resistance Vs. Temperature 0.13 0.11 0.09 0.07 0.05 4 0.8 0.6 ...

  • Page 5

    oss ds gd 400 C iss ...

  • Page 6

    IRF7501 Micro8 Package Outline 0 ...

  • Page 7

    Tape & Reel Dimensions are shown in millimeters (inches ...