IRF7501TR International Rectifier, IRF7501TR Datasheet

MOSFET DUAL N-CH 20V 2.4A MICRO8

IRF7501TR

Manufacturer Part Number
IRF7501TR
Description
MOSFET DUAL N-CH 20V 2.4A MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7501TR

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
135 mOhm @ 1.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.4A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 4.5V
Input Capacitance (ciss) @ Vds
260pF @ 15V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
Micro8™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7501TR
IRF7501
IRF7501CT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7501TR
Manufacturer:
IR
Quantity:
3 000
Part Number:
IRF7501TR
Quantity:
186
Part Number:
IRF7501TRPBF
Manufacturer:
International Rectifier
Quantity:
29 387
Part Number:
IRF7501TRPBF
Manufacturer:
IR
Quantity:
20 000
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is
at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable electronics and
PCMCIA cards.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
V
I
I
I
P
P
V
V
dv/dt
TJ , TSTG
R
only for product marked with Date Code 505 or later .
D
D
DM
GS
DS
D
D
GSM
@ T
@ T
JA
Generation V Technology
Ulrtra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
@T
@T
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage Single Pulse tp<10µs
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Maximum Junction-to-Ambient
Parameter
Parameter
PRELIMINARY
GS
GS
@ 10V
@ 10V
G 2
G 1
S 2
S 1
1
2
3
4
T o p V ie w
HEXFET
240 (1.6mm from case)
8
7
6
5
-55 to + 150
D 1
D 1
D 2
D 2
Max.
Max.
100
1.25
0.01
± 12
2.4
1.9
0.8
5.0
20
19
16
®
R
IRF7501
Power MOSFET
DS(on)
V
DSS
PD - 91265H
M icro 8
= 0.135
=20V
Units
Units
W/°C
°C/W
V/ns
°C
W
W
V
A
V
V
1
4/30/98

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IRF7501TR Summary of contents

Page 1

... Available in Tape & Reel Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRF7501 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V 10 BOTTOM 1.5V 1 0.1 1.5V 20µ 25°C J 0.01 0 rain-to-Source V oltage (V) D ...

Page 4

IRF7501 2 1.7A D 1.5 1.0 0.5 0.0 -60 -40 - Junction T em perature (° Fig 5. Normalized On-Resistance Vs. Temperature 0.13 0.11 0.09 0.07 0.05 4 0.8 0.6 ...

Page 5

oss ds gd 400 C iss ...

Page 6

IRF7501 Micro8 Package Outline 0 ...

Page 7

Tape & Reel Dimensions are shown in millimeters (inches ...

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