IRF7555TR International Rectifier, IRF7555TR Datasheet

IRF7555TR

Manufacturer Part Number

IRF7555TR

Description

MOSFET 2P-CH 20V 4.3A MICRO8

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7555TR.pdf (7 pages)

Specifications of IRF7555TR

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

55 mOhm @ 4.3A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

4.3A

Vgs(th) (max) @ Id

1.2V @ 250µA

Gate Charge (qg) @ Vgs

15nC @ 5V

Input Capacitance (ciss) @ Vds

1066pF @ 10V

Power - Max

1.25W

Mounting Type

Surface Mount

Package / Case

Micro8™

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRF7555TR
IRF7555
IRF7555CT

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF7555TR

Manufacturer:

ROHM

Quantity:

876

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7555TR

Manufacturer:

Quantity:

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Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7555TRPBF

Manufacturer:

Quantity:

20 000

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Description

Absolute Maximum Ratings

Thermal Resistance

New trench HEXFET power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design that HEXFET

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a wide

variety of applications.

The new Micro8 package has half the footprint area of the

standard SO-8. This makes the Micro8 an ideal package for

applications where printed circuit board space is at a premium.

The low profile (<1.1mm) of the Micro8 will allow it to fit easily

into extremely thin application environments such as portable

electronics and PCMCIA cards.

www.irf.com

dv/dt

Ultra Low On-Resistance

Dual P-Channel MOSFET

Very Small SOIC Package

Available in Tape & Reel

Trench Technology

Low Profile (<1.1mm)

@ T

, T

STG

= 25°C

= 70°C

= 25°C

= 70°C

Drain-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Parameter

Maximum Junction-to-Ambient

Linear Derating Factor

Soldering Temperature, for 10 seconds

Single Pulse Avalanche Energy„

Gate-to-Source Voltage

Parameter

‚

„

@ -4.5V

Max.

G 2

G 1

S 1

T o p V ie w

HEXFET

240 (1.6mm from case)

-55 to + 150

D 1

D 2

100

Max.

Micro8

1.25

-4.3

-3.4

Units

-20

-34

0.8

1.1

± 12

IRF7555

Power MOSFET

DS(on)

DSS

= 0.055

PD -91865B

= -20V

mW/°C

Units

V/ns

°C/W

°C

2/2/00

Related parts for IRF7555TR

IRF7555TR Summary of contents

Page 1

Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Description New trench HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ...

Page 2

IRF7555 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRF7555TR International Rectifier, IRF7555TR Datasheet

IRF7555TR

Specifications of IRF7555TR

Available stocks

Related parts for IRF7555TR

IRF7555TR Summary of contents

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