MOSFET 2P-CH 20V 4.3A MICRO8

IRF7555TR

Manufacturer Part NumberIRF7555TR
DescriptionMOSFET 2P-CH 20V 4.3A MICRO8
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF7555TR datasheet
 


Specifications of IRF7555TR

Fet Type2 P-Channel (Dual)Fet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs55 mOhm @ 4.3A, 4.5VDrain To Source Voltage (vdss)20V
Current - Continuous Drain (id) @ 25° C4.3AVgs(th) (max) @ Id1.2V @ 250µA
Gate Charge (qg) @ Vgs15nC @ 5VInput Capacitance (ciss) @ Vds1066pF @ 10V
Power - Max1.25WMounting TypeSurface Mount
Package / CaseMicro8™Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRF7555TR
IRF7555
IRF7555CT
  
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Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Description
New trench HEXFET power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8 package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
V
Drain-Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
I
Pulsed Drain Current
DM
P
@T
= 25°C
Maximum Power Dissipation
D
A
P
@T
= 70°C
Maximum Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy„
AS
dv/dt
Peak Diode Recovery dv/dt
T
, T
Junction and Storage Temperature Range
J
STG
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambient
JA
www.irf.com
HEXFET
1
S 1
2
G 1
3
S2
4
G 2
T o p V ie w
@ -4.5V
GS
@ -4.5V
GS

Max.
PD -91865B
IRF7555
®
Power MOSFET
8
D 1
V
= -20V
DSS
7
D 1
6
D 2
5
D 2
R
= 0.055
DS(on)
Micro8
Max.
Units
-20
V
-4.3
-3.4
A
-34
1.25
W
0.8
W
10
mW/°C
± 12
V
36
mJ
1.1
V/ns
-55 to + 150
°C
240 (1.6mm from case)
Units
100
°C/W
1
2/2/00

IRF7555TR Summary of contents

  • Page 1

    Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Description New trench HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ...

  • Page 2

    IRF7555 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

  • Page 3

    VGS TOP -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V 10 1 -1.50V 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ° T ...

  • Page 4

    IRF7555 1600 1MHz iss rss oss ds gd 1200 C iss 800 400 C oss C rss ...

  • Page 5

    T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) ...

  • Page 6

    IRF7555 Package Outline Micro8 Outline Dimensions are shown in millimeters (inches (. ...

  • Page 7

    Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches -48 1 & E ...