IRF7555TR International Rectifier, IRF7555TR Datasheet - Page 5

• Manufacturer Part Number: IRF7555TR
• Description: MOSFET 2P-CH 20V 4.3A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7555TR

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 1066pF @ 10V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7555TR; IRF7555; IRF7555CT

www.irf.com
1000
5.0
4.0
3.0
2.0
1.0
0.0
100
0.1
10
0.0001
Fig 9. Maximum Drain Current Vs.
1
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
Case Temperature
C
(THERMAL RESPONSE)
0.001
75
SINGLE PULSE
100
125
0.01
°
t , Rectangular Pulse Duration (sec)
1
150
0.1
100
80
60
40
20
0
Fig 10. Maximum Avalanche Energy
25
Starting T , Junction Temperature ( C)
1. Duty factor D = t / t
2. Peak T = P
Notes:
1
50
Vs. Drain Current
J
J
75
DM
x Z
1
thJA
P
2
10
DM
IRF7555
100
+ T
TOP
BOTTOM
A
t
1
t
2
125
-1.3A
-2.4A
-3.0A
°
I D
100
5
150