BZD27C160P-GS18 Vishay, BZD27C160P-GS18 Datasheet

Zener Diodes 160 Volt 0.8 Watt 5%

BZD27C160P-GS18

Manufacturer Part Number
BZD27C160P-GS18
Description
Zener Diodes 160 Volt 0.8 Watt 5%
Manufacturer
Vishay
Datasheet

Specifications of BZD27C160P-GS18

Zener Voltage
162 V
Voltage Tolerance
6 %
Voltage Temperature Coefficient
0.11 % / C
Power Dissipation
800 mW
Maximum Reverse Leakage Current
1 uA
Maximum Zener Impedance
350 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Package / Case
DO-219AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Zener Diodes with Surge Current Specification
Features
Mechanical Data
Case: JEDEC DO-219AB (SMF
Weight: approx. 15 mg
Absolute Maximum Ratings
T
1)
2)
Thermal Characteristics
T
1)
Electrical Characteristics
T
Document Number 85810
Rev. 1.8, 13-Apr-05
• Sillicon Planar Zener Diodes
• Low profile surface-mount package
• Zener and surge current specification
• Low leakage current
• Excellent stability
• High temperature soldering:
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
Power dissipation
Non-repetitive peak pulse power
dissipation
Thermal resistance junction to ambient air
Thermal resistance junction to lead
Maximum junction temperature
Storage temperature range
Forward voltage
amb
amb
amb
Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)
T
Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)
J
260 °C/10 sec. at terminals
and WEEE 2002/96/EC
= 25 °C prior to surge
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
T
T
100 µs square pulse
10/1000 µs waveform (BZD27-
C7V5P to BZD27-C100P)
10/1000 µs waveform (BZD27-
C110P to BZD27-C200P)
I
F
L
A
= 0.2 A
= 80 °C
= 25 °C
®
) Plastic case
1)
Test condition
Test condition
Test condition
2)
BZD27C3V6P to BZD27C200P
2)
2)
e3
Packaging codes/options:
GS18 / 10 k per 13 " reel, (8 mm tape), 50 k/box
GS08 / 3 k per 7 " reel, (8 mm tape), 30 k/box
Symbol
V
F
Symbol
Symbol
P
P
P
R
R
P
P
RSM
RSM
T
ZSM
thJA
thJL
T
tot
tot
S
j
Min
- 55 to + 150
Vishay Semiconductors
Value
Value
0.8
Typ.
300
150
100
180
150
2.3
30
1)
Max
1.2
17249
www.vishay.com
K/W
K/W
Unit
Unit
°C
°C
W
W
W
W
W
Unit
V
1

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BZD27C160P-GS18 Summary of contents

Page 1

... Symbol P tot P tot 2) P ZSM P RSM 2) P RSM 2) Test condition Symbol 1) R thJA R thJL Test condition Symbol V F Vishay Semiconductors 17249 Value Unit 2 0.8 300 W 150 W 100 W Value Unit 180 K/W 30 K/W 150 ° 150 °C Min Typ. Max 1.2 www.vishay.com ...

Page 2

... BZD27C36P F4 BZD27C39P F5 BZD27C43P F6 BZD27C47P F7 BZD27C51P F8 BZD27C56P F9 BZD27C62P G0 BZD27C68P G1 BZD27C75P G2 BZD27C82P G3 BZD27C91P G4 BZD27C100P G5 BZD27C110P G6 BZD27C120P G7 BZD27C130P G8 BZD27C150P G9 BZD27C160P H0 BZD27C180P H1 BZD27C200P H2 1) Pulse test: tp ≤ 5 ms. www.vishay.com °C unless otherwise noted Differential Working Voltage Resistance dif Z Ω V min max typ max 3.4 3.8 ...

Page 3

... BZD27C91P 85 BZD27C100P 94 BZD27C110P 104 BZD27C120P 114 BZD27C130P 124 BZD27C150P 138 BZD27C160P 153 BZD27C180P 168 BZD27C200P 188 Non-repetitive peak reverse current in accordance with "IEC 60-1, Section 8" (10/1000 µs pulse); see Fig Document Number 85810 Rev. 1.8, 13-Apr-05 BZD27C3V6P to BZD27C200P Test Temperature Coefficient Current α ...

Page 4

... BZD27C3V6P to BZD27C200P Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 10.00 Typ. V Max 1.00 0.10 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 17411 V – Forward Voltage ( Figure 1. Forward Current vs. Forward Voltage 10000 C5V1P C6V8P C12P C18P ...

Page 5

... Rev. 1.8, 13-Apr-05 BZD27C3V6P to BZD27C200P 0.85 (0.033) 0.35 (0.014) 3.9 (0.152) 3.5 (0.137) 0.99 (0.039) 0.97 (0.038) Z Cathode Band Top View 2.9 (0.113) 2.7 (0.105) Mounting Pad Layout 1.6 (0.062) 1.3 (0.051) Vishay Semiconductors 0.16 (0.006) 1.2 (0.047) 0.8 (0.031) 1.4 (0.055) www.vishay.com 5 ...

Page 6

... BZD27C3V6P to BZD27C200P Vishay Semiconductors Blistertape for SMF www.vishay.com 6 Document Number 85810 Rev. 1.8, 13-Apr-05 ...

Page 7

... Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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