FDC6000NZ Fairchild Semiconductor, FDC6000NZ Datasheet

MOSFET N-CH DUAL 20V 6.5A 6SSOT

FDC6000NZ

Manufacturer Part Number
FDC6000NZ
Description
MOSFET N-CH DUAL 20V 6.5A 6SSOT
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDC6000NZ

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 6.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
7.3A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Input Capacitance (ciss) @ Vds
840pF @ 10V
Power - Max
1.2W
Mounting Type
Surface Mount
Package / Case
6-SSOT FLMP, SuperSOT-6 FLMP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC6000NZTR
FDC6000NZ_NL
FDC6000NZ_NLTR
FDC6000NZ_NLTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDC6000NZ
Manufacturer:
TI
Quantity:
340
FDC6000NZ
Dual N-Channel 2.5V Specified PowerTrench
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V). Packaged in FLMP SSOT-6,
the R
optimized for battery power management applications.
Applications
• Battery management/Charger Application
• Load switch
2004 Fairchild Semiconductor Corporation
MOSFET Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
DSS
GSS
D
J
θJA
θJc
, T
Device Marking
STG
DS(ON)
SuperSOT-6
SuperSOT-6
.0NZ
G1
G1
and thermal properties of the device are
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
S1
S1
S2
S2
TM
TM
FLMP
FLMP
– Continuous
– Pulsed
FDC6000NZ
S1
S1
Device
Parameter
S2
S2
G2
G2
T
A
=25
o
Reel Size
C unless otherwise noted
7’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1a)
Features
• 6.5 A, 20 V
• ESD protection diode (note 3)
• High performance trench technology for extremely
• FLMP SSOT-6 package: Enhanced thermal
low R
performance in industry-standard package size
MOSFET
DS(ON)
Tape width
4
5
6
Bottom Drain Contact
8mm
Bottom Drain Contact
R
R
DS(ON)
DS(ON)
–55 to +150
Ratings
±12
7.3
1.6
1.8
1.2
20
20
68
= 20 mΩ @ V
= 28 mΩ @ V
1
3
2
1
GS
GS
June 2004
FDC6000NZ Rev E1 (W)
= 4.5 V
= 2.5 V
3000 units
Quantity
Units
°C/W
°C
W
V
V
A

Related parts for FDC6000NZ

FDC6000NZ Summary of contents

Page 1

... Reel Size 7’’ June 2004 mΩ 4.5 V DS(ON mΩ 2.5 V DS(ON) GS Bottom Drain Contact Bottom Drain Contact Ratings Units 20 V ± 1.6 W 1.8 1.2 –55 to +150 °C °C Tape width Quantity 8mm 3000 units FDC6000NZ Rev E1 (W) ...

Page 2

... 6 1.0 MHz mV 1.0 MHz Ω 4 GEN 6 4 1.25A (Note Min Typ Max Units mV/°C µA 1 ± 10 µA 0.6 0.9 1.5 V –4 mV/°C mΩ 16.5 20 16.8 21 19.2 24 22 840 pF 210 pF 100 pF Ω 2 1.5 nC 2.1 nC 1.25 A 0.7 1.2 V FDC6000NZ RevE1 (W) ...

Page 3

... A Test Conditions 100 A/µ determined by the user's board design. θCA 68°C/W when 2 mounted on a 1in pad copper (Single Operation). Min Typ Max Units 102°C/W when mounted on a minimum pad copper (Single Operation). FDC6000NZ RevE1 (W) ...

Page 4

... Dimensional Outline and Pad Layout Bottom View Top View Recommended Landing Pattern For Common Drain Configuration Recommended Landing Pattern For Standard Dual Configuration FDC6000NZ RevE1 (W) ...

Page 5

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 2.0V 2.5V 3.0V 3.5V 4. DRAIN CURRENT ( 3 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC6000NZ Rev E1(W) 5 ...

Page 6

... Figure 10. Single Pulse Maximum Power Dissipation. 0 TIME (sec 1MHz ISS SINGLE PULSE R = 102°C/W θ 25° 100 1000 t , TIME (sec ( θJA θ 102 °C/W θJA P(pk (t) θ Duty Cycle 100 1000 FDC6000NZ Rev E1(W) ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...

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