FDG6320C_D87Z Fairchild Semiconductor, FDG6320C_D87Z Datasheet

FDG6320C_D87Z

Manufacturer Part Number

FDG6320C_D87Z

Description

MOSFET N/P-CH DUAL 25V SC70-6

Manufacturer

Fairchild Semiconductor

Datasheets

1.FDG6320C.pdf (9 pages)

2.FDG6304P_D87Z.pdf (2 pages)

Specifications of FDG6320C_D87Z

Fet Type

N and P-Channel

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

4 Ohm @ 220mA, 4.5V

Drain To Source Voltage (vdss)

25V

Current - Continuous Drain (id) @ 25° C

220mA, 140mA

Vgs(th) (max) @ Id

1.5V @ 250µA

Gate Charge (qg) @ Vgs

0.4nC @ 4.5V

Input Capacitance (ciss) @ Vds

9.5pF @ 10V

Power - Max

300mW

Mounting Type

Surface Mount

Package / Case

SC-70-6, SC-88, SOT-363

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Symbol

ESD

THERMAL CHARACTERISTICS

FDG6320C

Dual N & P Channel Digital FET

These dual N & P-Channel logic level enhancement mode

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This very

high density process is especially tailored to minimize

on-state resistance.

especially for low voltage applications as a replacement for

bipolar digital transistors and small signal MOSFETS. Since

bias resistors are not required, this dual digital FET can

replace several different digital transistors, with different bias

resistor values.

General Description

Absolute Maximum Ratings

GSS

STG

SC70-6

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Maximum Power Dissipation

Operating and Storage Temperature Ranger

Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

Thermal Resistance, Junction-to-Ambient

SC70-6

This

pin 1

SOT-23

- Continuous

- Pulsed

device has been designed

= 25

C unless other wise noted

SuperSOT

(Note 1)

-6

Features

N-Ch 0.22 A, 25 V, R

P-Ch -0.14 A, -25V, R

Very small package outline SC70-6.

Very low level gate drive requirements allowing direct

operation in 3 V circuits (V

Gate-Source Zener for ESD ruggedness

(>6kV Human Body Model).

SOT-8

N-Channel

0.22

0.65

-55 to 150

415

0.3

DS(ON)

SO-8

DS(ON)

GS(th)

= 4.0

= 10

P-Channel

= 5.0

< 1.5 V).

= 13

-0.14

-0.4

-25

-8

@ V

November 1998

@ V

= 4.5 V,

= -4.5V,

SOIC-14

= -2.7V.

= 2.7 V.

FDG6320C Rev. D

Units

°C/W

°C

Related parts for FDG6320C_D87Z

FDG6320C_D87Z Summary of contents

Page 1

... ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient JA © 1998 Fairchild Semiconductor Corporation Features N-Ch 0. P-Ch -0.14 A, -25V, R Very small package outline SC70-6. Very low level gate drive requirements allowing direct operation circuits (V Gate-Source Zener for ESD ruggedness (> ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temp. Coefficient DSS J I Zero Gate Voltage Drain Current DSS Zero Gate Voltage Drain Current I DSS Gate ...

Page 3

Electrical Characteristics SWITCHING CHARACTERISTICS (Note 2) Symbol Parameter t Turn - On Delay Time D(on) Turn - On Rise Time Turn - Off Delay Time D(off) t Turn - Off Fall Time f Total Gate Charge Q ...

Page 4

Typical Electrical Characteristics: N-Channel 0.5 V =4.5V GS 3.5V 0.4 3.0V 0.3 2.7V 2.5V 0.2 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 0.22A D 1 4.5V ...

Page 5

Typical Electrical Characteristics: N-Channel 0.22A DS D 10V 0.1 0.2 0.3 0 GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 1 0.3 0.1 V ...

Page 6

Typical Electrical Characteristics: P-Channel 0 -4.5V GS -3.5V -3.0V 0.15 -2.7V 0.1 0. DRAIN-SOURCE VOLTAGE (V) DS Figure 11. On-Region Characteristics. 1 -0.14A -4.5V 1.4 GS 1.2 ...

Page 7

Typical Electrical Characteristics: P-Channel -0.14A -5V DS -10V 6 -15V 0.1 0.2 0 GATE CHARGE (nC) g Figure 17. Gate Charge Characteristics. 1 0.3 0 -4.5V ...

Page 8

Typical Thermal Characteristics: N & P-Channel 0.5 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 0.01 Single Pulse 0.01 0.005 0.002 0.0001 0.001 Figure 21. Transient Thermal Response Curve. Transient thermalresponse will change depending on the ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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