SI4914DY-T1-E3 Vishay, SI4914DY-T1-E3 Datasheet
SI4914DY-T1-E3
Specifications of SI4914DY-T1-E3
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SI4914DY-T1-E3 Summary of contents
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... Top View Ordering Information: Si4914DY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Avalanche Energy a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si4914DY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...
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... Q – Total Gate Charge (nC) g Gate Charge Document Number: 72938 S-61959-Rev. C, 09-Oct- 4.5 6.0 7.5 Si4914DY Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V – Gate-to-Source Voltage (V) GS Transfer Characteristics 1000 C iss 800 ...
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... Si4914DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless noted 150 ° 0.0 0.2 0.4 0.6 V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0.0 - 0.2 - 0.4 - 0 – Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 1 250 µA ...
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... Single Pulse 0. Document Number: 72938 S-61959-Rev. C, 09-Oct- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si4914DY Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA - ( ...
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... Si4914DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless noted thru – Drain-to-Source Voltage (V) DS Output Characteristics 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 – Drain Current (A) D On-Resistance vs. Drain Current 7 – Total Gate Charge (nC) g Gate Charge www.vishay.com ...
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... Limited DS(on D(on) Limited °C C 0.1 Single Pulse BV Limited DSS 0.01 0 – Drain-to-Source Voltage (V) DS Safe Operating Area Si4914DY Vishay Siliconix 0.10 0.08 0. 0.02 0. – Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 200 160 120 0.001 0.01 ...
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... Si4914DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...