IRF7503TR International Rectifier, IRF7503TR Datasheet - Page 4

• Manufacturer Part Number: IRF7503TR
• Description: MOSFET 2N-CH 30V 2.4A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7503TR

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 210pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7503TR; IRF7503; IRF7503CT

IRF7503
1 0 0
0 . 1
1 0
4 0 0
3 0 0
2 0 0
1 0 0
1
0 . 4
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 150 °C
J
Drain-to-Source Voltage
V
C
C
C
V
S D
is s
o s s
rs s
D S
0 . 8
, S ource-to-Drain Voltage (V )
Forward Voltage
V
C
C
C
, Drain-to-Source V oltage (V)
G S
is s
rs s
o ss
T = 2 5°C
J
= 0 V,
= C
= C
= C
gs
ds
gd
1 . 2
+ C
+ C
1 0
gd
g d
f = 1M H z
, C
ds
1 . 6
SH O RTE D
V
G S
= 0 V
2 . 0
1 0 0
A
A
1 0 0
0 . 1
1 0
2 0
1 6
1 2
1
8
4
0
1
0
Fig 8. Maximum Safe Operating Area
I
T
T
S ing le Pulse
D
A
J
= 1 .7 A
= 25 °C
= 15 0°C
Fig 6. Typical Gate Charge Vs.
OPE R ATIO N IN TH IS A RE A LIMITE D
V
2
D S
Q , Total Gate Charge (nC )
Gate-to-Source Voltage
G
, Drain-to-Source Voltage (V)
4
BY R
V
V
1 0
6
D S(o n)
D S
D S
FO R TES T C IR CU IT
= 24 V
= 15 V
SEE FIG U R E 9
8
1 0µs
100µ s
1 ms
10m s
1 0
1 0 0
1 2
A
A