IRF7504TR International Rectifier, IRF7504TR Datasheet
IRF7504TR
Specifications of IRF7504TR
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IRF7504TR Summary of contents
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... Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...
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IRF7504 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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VGS TOP - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2. BOTT µ LSE W IDTH T = ...
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IRF7504 iss ...
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Q G -4. Charge Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. -3mA Current Sampling Resistors Fig ...
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IRF7504 Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Reverse Recovery Current Re-Applied Voltage Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations D.U dv/dt controlled by ...
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Package Outline Micro8 Outline Dimensions are shown in millimeters (inches ...
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IRF7504 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches & ...