IRF7504TR International Rectifier, IRF7504TR Datasheet

IRF7504TR

Manufacturer Part Number

IRF7504TR

Description

MOSFET 2P-CH 20V 1.7A MICRO8

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7504TR.pdf (8 pages)

Specifications of IRF7504TR

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

270 mOhm @ 1.2A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

1.7A

Vgs(th) (max) @ Id

700mV @ 250µA

Gate Charge (qg) @ Vgs

8.2nC @ 4.5V

Input Capacitance (ciss) @ Vds

240pF @ 15V

Power - Max

1.25W

Mounting Type

Surface Mount

Package / Case

Micro8™

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7504TR

Manufacturer:

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7504TRPBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 8
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Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The new Micro8 package, with half the footprint area of the

standard SO-8, provides the smallest footprint available in

an SOIC outline. This makes the Micro8 an ideal device for

applications where printed circuit board space is at a

premium. The low profile (<1.1mm) of the Micro8 will allow

it to fit easily into extremely thin application environments

such as portable electronics and PCMCIA cards.

Absolute Maximum Ratings

Thermal Resistance

dv/dt

All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective

only for product marked with Date Code 505 or later .

@ T

Generation V Technology

Ultra Low On-Resistance

Dual P-Channel MOSFET

Very Small SOIC Package

Low Profile (<1.1mm)

Available in Tape & Reel

Fast Switching

STG

= 25°C

= 70°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Parameter

@ -4.5V

G 2

G 1

S 2

S 1

T o p V iew

Typ.

–––

-55 to + 150

HEXFET

Max.

-1.7

-1.4

-9.6

-5.0

1.25

± 12

Micro8

D 1

D 2

Max.

IRF7504

100

Power MOSFET

DS(on)

DSS

PD - 9.1267G

= -20V

= 0.27

Units

mW/°C

Units

V/ns

°C

°C/W

8/25/97

Related parts for IRF7504TR

IRF7504TR Summary of contents

Page 1

... Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRF7504 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRF7504TR International Rectifier, IRF7504TR Datasheet

IRF7504TR

Specifications of IRF7504TR

Available stocks

Related parts for IRF7504TR

IRF7504TR Summary of contents

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