IRF7507TR International Rectifier, IRF7507TR Datasheet
IRF7507TR
Specifications of IRF7507TR
IRF7507
IRF7507CT
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IRF7507TR Summary of contents
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... Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...
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IRF7507 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I ...
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VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V 10 BOTTOM 1.5V 1 0.1 1.5V 20µ 25°C J 0.01 0 rain-to-S ourc e V oltage ...
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IRF7507 0.13 0. 0.07 0. ate-to-S ource V oltage ( Fig 7. Typical On-Resistance Vs. Gate Voltage 500 ...
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VGS TOP - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2. BOTTOM - 1.5V 1 0.1 -1.5V 20µ 25°C J 0.01 ...
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IRF7507 0.300 0.250 ID = -1.7A 0.200 0.150 0.100 Gate-to-Source Voltage (V) GS Fig 17. Typical On-Resistance Vs. Gate Voltage 500 ...
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Package Outline Micro8 Outline Dimensions are shown in millimeters (inches 0.08 ...
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IRF7507 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches & E ...