IRF7509TR International Rectifier, IRF7509TR Datasheet
IRF7509TR
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IRF7509TR Summary of contents
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... Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...
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IRF7509 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I ...
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VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3. 20µ 25°C J 0.1 0 rain-to-Sourc e Voltage (V ...
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IRF7509 0.140 0.120 ID = 2.7A 0.100 0.080 0.060 Gate-to-Source Voltage (V) GS Fig 7. Typical On-Resistance Vs. Gate Voltage 400 ...
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VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 1 -3.0 V 20µ °C J 0.1 0.1 ...
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IRF7509 /5 Fig 17. Typical On-Resistance Vs. Gate Voltage 400 ...
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Package Outline Micro8 Outline Dimensions are shown in millimeters (inches 0.08 ...
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IRF7509 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches & E ...