IRF7509TR International Rectifier, IRF7509TR Datasheet - Page 2

• Manufacturer Part Number: IRF7509TR
• Description: MOSFET N+P 30V 2A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7509TR

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.7A, 2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 210pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7509
Electrical Characteristics @ T
Notes:
Source-Drain Ratings and Characteristics
t
V
R
V
g
I
I
Q
Q
Q
t
t
t
C
C
C
I
I
V
t
Q
d(on)
DSS
r
d(off)
f
GSS
rr
S
SM
V
fs
(BR)DSS
GS(th)
DS(ON)
SD
g
gs
gd
iss
oss
rss
rr
Repetitive rating; pulse width limited by
2
N-Channel I
P-Channel I
max. junction temperature. ( See fig. 21 )
(BR)DSS
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SD
SD
-1.2A, di/dt
1.7A, di/dt
Parameter
Parameter
120A/µs, V
160A/µs, V
DD
J
DD
= 25°C (unless otherwise specified)
V
V
(BR)DSS
(BR)DSS
N-Ch 30
N-Ch — 0.059 —
N-Ch
N-Ch 1.0
N-Ch 1.9
N-Ch —
N-Ch —
N-Ch ––
N-Ch ––
N-Ch ––
N-Ch —
N-Ch —
N-Ch —
N-Ch —
N-Ch —
N-Ch —
N-Ch —
N-Ch —
N-Ch —
N-Ch —
N-Ch —
N-Ch —
P-Ch -30
P-Ch — -0.039 —
P-Ch
P-Ch -1.0
P-Ch 0.92
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
N-P
, T
, T
J
J
Min. Typ. Max. Units
Min. Typ. Max. Units
—
—
—
—
––
150°C
150°C
0.09 0.110
0.14 0.175
0.17 0.20
0.30 0.40
210
180
7.8
7.5
1.2
1.3
2.5
2.5
4.7
9.7
5.3
9.3
10
12
12
19
80
87
32
42
40
30
48
37
—
—
—
—
—
—
—
—
—
—
— ±100
—
— -1.25
—
—
—
—
1.25
-1.0
-1.2
1.0
-25
1.8
1.9
3.8
3.7
-16
1.2
—
—
—
—
—
—
25
12
11
—
—
—
—
—
—
—
—
—
—
—
—
—
—
21
60
45
72
55
Pulse width
V/°C
Surface mounted on FR-4 board, t
nC
pF
µA
nC
ns
ns
V
V
S
A
V
N-Channel
V
P-Channel
V
N-Channel
I
P-Channel
I
N-Channel
V
R
P-Channel
V
R
V
V
Reference to 25°C, I
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
V
V
T
T
N-Channel
T
P-Channel
T
D
D
GS
GS
DD
DD
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
GS
D
D
J
J
J
J
= 1.7A, V
= -1.2A, V
= 25°C, I
= 25°C, I
= 25°C, I
= 25°C, I
= 12
= 8.7
= 0V, V
= 0V, V
= 0V, I
= V
= V
= 10V, I
= -10V, I
= 24 V, V
= -24V, V
= 24 V, V
= -24V, V
= ± 20V
= 15V, I
= -15V, I
= 0V, I
= 10V, I
= 4.5V, I
= -10V, I
= -4.5V, I
GS
GS
300µs; duty cycle
, I
, I
D
D
DS
DS
DS
F
F
D
D
D
D
D
DS
S
S
= 250µA
= -250µA
D
D
D
D
GS
GS
D
= 1.7A, di/dt = 100A/µs
= -1.2A, di/dt = -100A/µs
GS
GS
= 250µA
= -250µA
= 1.7A, R
= 1.7A
= 0.85A
= 25V, ƒ = 1.0MHz
= -25V, ƒ = 1.0MHz
= 1.7A, V
= -1.8A, V
= 24V, V
= 0.85A
=-1.2A
= -0.6A
= -1.2A, R
Conditions
= -24V, V
=-0.6A
= 0V
= 0V, T
= 0V
= 0V, T
D
D
Conditions
= 1mA
= -1mA
GS
G
GS
www.irf.com
J
J
GS
GS
G
= 125°C
= 6.1
= 125°C
= 10V
= 0V
= 6.2 ,
= 0V
= -10V
2%.
10sec.