IRF7509TR International Rectifier, IRF7509TR Datasheet - Page 3

• Manufacturer Part Number: IRF7509TR
• Description: MOSFET N+P 30V 2A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7509TR

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.7A, 2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 210pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 5. Normalized On-Resistance
1 0 0
1 0 0
0.1
2.0
1.5
1.0
0.5
0.0
0.1
1 0
1 0
1
1
0.1
- 6 0
3.0
TOP
BOTTOM 3.0V
I
D
- 4 0
= 1.7A
V
T , J unc tion T em pe rature (°C )
V
3.5
- 2 0
J
D S
G S
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
Vs. Temperature
, G a te -to -S o u rce V o lta g e (V )
, D rain-to-Sourc e Voltage (V )
0
4.0
2 0
T = 2 5 °C
J
4 0
T = 1 5 0 °C
4.5
J
1
6 0
V
2 0 µ s P U L S E W ID T H
20µ s P U LS E W ID TH
T = 25°C
J
D S
8 0
= 1 0 V
5.0
1 0 0 1 2 0 1 4 0 1 6 0
3.0V
V
G S
5.5
= 10V
6.0
1 0
A
A
A
N - Channel
Fig 6. Typical On-Resistance Vs. Drain
Fig 2. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
0.220
0.180
0.140
0.100
0.060
1 0 0
1 0 0
0.1
0.1
1 0
1 0
1
1
0.1
0.4
0
TOP
BOTTOM 3.0V
T = 150°C
J
V
V
S D
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
D S
Forward Voltage
2
0.8
, D rain-to-Source V oltage (V )
I
, S ource-to-D rain Voltage (V)
D
Current
, Drain Current (A)
T = 25°C
VGS = 4.5V
J
VGS = 10V
4
1.2
1
20µ s P U LS E W ID TH
T = 150°C
J
6
IRF7509
3.0V
1.6
8
V
G S
= 0V
10
1 0
2.0
A
A
3