IRF7509TR International Rectifier, IRF7509TR Datasheet - Page 5

• Manufacturer Part Number: IRF7509TR
• Description: MOSFET N+P 30V 2A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7509TR

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.7A, 2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 210pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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Fig 11. Typical Output Characteristics
Fig 13. Typical Transfer Characteristics
0.1
0.1
2.0
1.5
1.0
0.5
0.0
1 0
1 0
1
1
Fig 15. Normalized On-Resistance
0.1
3.0
-60
TOP
BOTTOM - 3.0V
I
D
-40
= -1.2A
T , J unc tion T em perature (°C )
-V
-V
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
-20
J
VGS
D S
G S
T = 2 5°C
4.0
J
, D rain-to-S ourc e V oltage (V )
, G a te -to -S ou rce V olta ge (V )
0
Vs. Temperature
2 0
T = 1 5 0 °C
4 0
J
5.0
1
6 0
V
2 0 µ s P U L S E W ID T H
20µ s P U LS E W ID TH
T = 25 °C
D S
J
8 0
-3.0 V
= -1 0 V
1 0 0 1 2 0 1 4 0 1 6 0
6.0
V
G S
= -10V
7.0
1 0
A
A
A
P - Channel
Fig 16. Typical On-Resistance Vs. Drain
Fig 12. Typical Output Characteristics
Fig 14. Typical Source-Drain Diode
0.1
0.1
10
1 0
1
1
0.4
0.1
TOP
BOTTOM - 3.0V
T = 150°C
J
-V
-V
Forward Voltage
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
0.6
S D
VGS
D S
Current
, Sourc e-to-D rain Voltage (V )
, D rain-to-S ource Voltage (V )
,
0.8
T = 25°C
1
J
IRF7509
20µs P U LS E W ID TH
T = 150°C
1.0
J
-3.0V
1.2
V
G S
= 0V
1.4
1 0
A
A
5