MOSFET 2N-CH 20V 5.4A MICRO8

IRF7530TR

Manufacturer Part NumberIRF7530TR
DescriptionMOSFET 2N-CH 20V 5.4A MICRO8
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF7530TR datasheet
 


Specifications of IRF7530TR

Fet Type2 N-Channel (Dual)Fet FeatureStandard
Rds On (max) @ Id, Vgs30 mOhm @ 5.4A, 4.5VDrain To Source Voltage (vdss)20V
Current - Continuous Drain (id) @ 25° C5.4AVgs(th) (max) @ Id1.2V @ 250µA
Gate Charge (qg) @ Vgs26nC @ 4.5VInput Capacitance (ciss) @ Vds1310pF @ 15V
Power - Max1.3WMounting TypeSurface Mount
Package / CaseMicro8™Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
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Trench Technology
l
Ultra Low On-Resistance
l
Dual N-Channel MOSFET
l
Very Small SOIC Package
l
Low Profile (<1.1mm)
l
Available in Tape & Reel
l
Description
New trench HEXFET
power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8 package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
Parameter
V
Drain- Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
Pulsed Drain Current 
I
DM
P
@T
= 25°C
Power Dissipation
D
A
P
@T
= 70°C
Power Dissipation
D
A
Linear Derating Factor
E
Single Pulse Avalanche Energy„
AS
V
Gate-to-Source Voltage
GS
T
T
Junction and Storage Temperature Range
J,
STG
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambient
θJA
www.irf.com
HEXFET
1
8
S1
2
7
G1
3
6
S2
4
5
G2
Top View
Max.
@ 4.5V
GS
@ 4.5V
GS
0.80
-55 to + 150
Max.
ƒ
100
PD-93760C
®
Power MOSFET
D1
V
= 20V
DSS
D1
D2
R
= 0.030Ω
D2
DS(on)
Micro8
Units
20
V
5.4
4.3
A
40
1.3
10
mW/°C
33
mJ
± 12
V
°C
Units
°C/W
1
4/12/04

IRF7530TR Summary of contents

  • Page 1

    Trench Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Description  New trench HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques ...

  • Page 2

    Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

  • Page 3

    VGS TOP 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V 2.25V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...

  • Page 4

    1MHz iss rss 1600 oss iss 1200 800 400 C oss C ...

  • Page 5

    T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL ...

  • Page 6

    Id = 5.0A 0.02 0.01 2.0 3.0 4.0 5.0 V GS, Gate -to -Source Voltage ( V ) Fig 12. On-Resistance Vs. Gate Voltage 6 0.10 0.08 0.06 0.04 0. 6.0 7.0 I Fig 13. On-Resistance ...

  • Page 7

    Micro8 Package Outline Dimensions are shown in millimeters (inches 0.25 (.010 ...

  • Page 8

    Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ...