IRF7530TR International Rectifier, IRF7530TR Datasheet - Page 4

• Manufacturer Part Number: IRF7530TR
• Description: MOSFET 2N-CH 20V 5.4A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7530TR

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 30 mOhm @ 5.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.4A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1310pF @ 15V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

4
100
2000
1600
1200
10
800
400
1
0.5
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 150 C
J
Drain-to-Source Voltage
V
SD
V
DS
°
,Source-to-Drain Voltage (V)
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
1.0
T = 25 C
J
=
=
=
=
C iss
C oss
C rss
0V,
C
C
C
gs
gd
ds
°
+ C
+ C
10
f = 1MHz
gd ,
gd
1.5
C
ds
V
GS
SHORTED
= 0 V
2.0
100
1000
100
0.1
10
Fig 8. Maximum Safe Operating Area
10
1
8
6
4
2
0
0.1
0
Fig 6. Typical Gate Charge Vs.
T
T
Single Pulse
I =
D
A
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
5.0A
V
DS
5
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
1
10
BY R
15
DS(on)
V
V
V
DS
DS
DS
= 16V
= 10V
= 4V
www.irf.com
10
20
10us
100us
1ms
10ms
25
100
30