IRF7530TR International Rectifier, IRF7530TR Datasheet - Page 5

• Manufacturer Part Number: IRF7530TR
• Description: MOSFET 2N-CH 20V 5.4A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7530TR

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 30 mOhm @ 5.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.4A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1310pF @ 15V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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1000
100
5.0
4.0
3.0
2.0
1.0
0.0
0.1
10
0.00001
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
Case Temperature
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
75
SINGLE PULSE
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
80
60
40
20
0
25
Fig 10. Maximum Avalanche Energy
Starting T , Junction Temperature ( C)
1. Duty factor D = t / t
2. Peak T = P
Notes:
0.1
50
Vs. Drain Current
J
J
75
DM
x Z
1
thJA
P
2
100
1
DM
+ T
TOP
BOTTOM
A
t
1
t
2
125
°
2.2A
4.0A
5.0A
I D
5
10
150