PBSS3515E NXP Semiconductors, PBSS3515E Datasheet
PBSS3515E
Specifications of PBSS3515E
Available stocks
Related parts for PBSS3515E
PBSS3515E Summary of contents
Page 1
... PBSS3515E 15 V, 0.5 A PNP low V Rev. 02 — 27 April 2009 1. Product profile 1.1 General description PNP low V SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2515E. 1.2 Features I Low collector-emitter saturation voltage V I High collector current capability I I High collector current gain (h I High effi ...
Page 2
... T amb junction temperature ambient temperature storage temperature Rev. 02 — 27 April 2009 PBSS3515E 15 V, 0.5 A PNP low V (BISS) transistor CEsat Simplified outline Graphic symbol Marking code 1R Min Max - - ...
Page 3
... Power derating curves Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point Rev. 02 — 27 April 2009 PBSS3515E 15 V, 0.5 A PNP low V CEsat 006aaa412 80 120 160 amb 2 Conditions Min Typ [1] in free air - ...
Page 4
... FR4 PCB, mounting pad for collector 1 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS3515E_2 Product data sheet Rev. 02 — 27 April 2009 PBSS3515E 15 V, 0.5 A PNP low V (BISS) transistor CEsat 006aab473 006aaa413 © NXP B.V. 2009. All rights reserved. ...
Page 5
... I = 12.5 mA; Bon turn-on time I = 12.5 mA Boff storage time fall time turn-off time transition frequency 100 mA 100 MHz collector capacitance MHz 300 s; 0.02. p Rev. 02 — 27 April 2009 PBSS3515E 15 V, 0.5 A PNP low V (BISS) transistor CEsat Min Typ = 200 - C [1] = 100 mA 150 - C [1] ...
Page 6
... Collector current as a function of collector-emitter voltage; typical values 006aaa373 1.3 V BEsat (V) 0.9 0.5 0 (mA (1) T amb (2) T amb (3) T amb Fig 7. Base-emitter saturation voltage as a function of collector current; typical values Rev. 02 — 27 April 2009 PBSS3515E (BISS) transistor CEsat 006aaa378 006aaa376 (1) (2) ( (mA ...
Page 7
... C T amb ( ( ( Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values 006aaa377 CEsat ( ) (1) (2) ( (mA amb ( ( ( Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values Rev. 02 — 27 April 2009 PBSS3515E (BISS) transistor CEsat 006aaa375 (1) (2) ( (mA 100 006aaa379 (1) (2) ( (mA 100 © NXP B.V. 2009. All rights reserved. ...
Page 8
... Fig 12. BISS transistor switching time definition Fig 13. Test circuit for switching times PBSS3515E_2 Product data sheet (probe) oscilloscope 450 250 mA 12.5 mA Bon Rev. 02 — 27 April 2009 PBSS3515E 15 V, 0.5 A PNP low V CEsat input pulse (idealized waveform) I (100 %) Bon I Boff output pulse (idealized waveform off (probe) o ...
Page 9
... Dimensions in mm Packing methods SOT416 4 mm pitch tape and reel 2.2 1.7 0.85 0 1.3 Rev. 02 — 27 April 2009 PBSS3515E 15 V, 0.5 A PNP low V (BISS) transistor CEsat 0.95 0.60 3 0.45 0.15 2 0.30 0.25 0.15 0.10 04-11-04 [1] Packing quantity 3000 ...
Page 10
... Product data sheet Rev. 02 — 27 April 2009 PBSS3515E 15 V, 0.5 A PNP low V (BISS) transistor CEsat Change notice Supersedes - PBSS3515E_1 - - © NXP B.V. 2009. All rights reserved ...
Page 11
... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 27 April 2009 PBSS3515E 15 V, 0.5 A PNP low V (BISS) transistor CEsat © NXP B.V. 2009. All rights reserved ...
Page 12
... NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com (BISS) transistor CEsat All rights reserved. Date of release: 27 April 2009 Document identifier: PBSS3515E_2 ...