IRF7750TR International Rectifier, IRF7750TR Datasheet
IRF7750TR
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IRF7750TR Summary of contents
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... HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier provides the designer with an extremely efficient and reliable device for battery and load is well known for, management ...
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IRF7750 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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VGS TOP -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V 100 -2.00V BOTTOM -1.50V 10 -1.50V 1 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...
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IRF7750 2500 1MHz iss rss 2000 oss iss 1500 1000 500 C oss C ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL ...
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IRF7750 2.0 -4. 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature ( C) J Fig 12. Normalized On-Resistance Vs. Temperature 0.08 0.06 0.04 0.02 0.00 Fig 14. Typical On-Resistance Vs. ...
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TSSOP-8 Package Outline WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo ...