IRF7750TR International Rectifier, IRF7750TR Datasheet - Page 2

• Manufacturer Part Number: IRF7750TR
• Description: MOSFET 2P-CH 20V 4.7A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7750TR

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.7A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 5V
• Input Capacitance (ciss) @ Vds: 1700pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Source-Drain Ratings and Characteristics
Electrical Characteristics @ T

IRF7750
‚
Notes:
I
I
V
t
Q
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
R
I
SM
S
rr
d(on)
r
d(off)
f
DSS
I
V
fs
(BR)DSS
GS(th)
GSS
SD
iss
oss
rss
rr
g
gs
gd
DS(on)
Repetitive rating; pulse width limited by
Pulse width
(BR)DSS
max. junction temperature.
2
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
300µs; duty cycle
Parameter
Parameter
2%.
J
= 25°C (unless otherwise specified)
ƒ
When mounted on 1 inch square copper board, t<10 sec
-0.45 –––
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1700 –––
–––
–––
–––
––– 0.012 –––
–––
–––
-20
11
–––
–––
–––
––– 0.030
––– 0.055
–––
–––
–––
–––
180
380
–––
––– -100
210
270
3.9
8.0
16
26
15
54
26
-1.2
–––
-1.2
–––
-1.0
100
–––
–––
–––
–––
–––
–––
-38
-25
5.8
-1.0
39
24
39
12
V/°C
nC
µA
nA
nC
ns
pF
ns
V
V
V
S
A
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
MOSFET symbol
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
D
G
= -4.7A
= -1.0A
= 25°C, I
= 25°C, I
= 10
= 24
= 0V, I
= -4.5V, I
= -2.5V, I
= V
= -10V, I
= -20V, V
= -16V, V
= -12V
= 12V
= -16V
= -5.0V‚
= -10V
= 0V
= -15V
GS
Conditions
, I
‚
D
S
F
D
Conditions
D
= -250µA
= -1.0A, V
= -1.0A
D
D
GS
GS
= -250µA
= -4.7A
‚
= -4.7A ‚
= -3.8A ‚
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
= 70°C
G
= 0V ‚
D
S