IRF6150

Manufacturer Part NumberIRF6150
DescriptionMOSFET 2P-CH 20V 7.9A FLIP-FET
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF6150 datasheet
 

Specifications of IRF6150

Fet Type2 P-Channel (Dual)Fet FeatureStandard
Rds On (max) @ Id, Vgs36 mOhm @ 7.9A, 4.5VDrain To Source Voltage (vdss)20V
Current - Continuous Drain (id) @ 25° C7.9AVgs(th) (max) @ Id1.2V @ 250µA
Power - Max3WMounting TypeSurface Mount
Package / CaseFlipFet™-16Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Gate Charge (qg) @ Vgs-Other namesIRF6150TR
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R
Ultra Low
per Footprint Area
l
SS(on)
Thermal Resistance
Low
l
Bi-Directional P-Channel Switch
l
Super Low Profile (<.8mm)
l
Available Tested on Tape & Reel
l
Description
True chip-scale packaging is available from International
Rectifier. Through the use of advanced processing tech-
niques and a unique packaging concept, extremely low
on-resistance and the highest power densities in the
industry have been made available for battery and load
management applications. These benefits, combined with
the ruggedized device design that International Rectifier
is well known for,
provides the designer with an ex-
tremely efficient and reliable device.
The FlipFET™ package, is one-third the footprint of a
comparable SO-8 package and has a profile of less than
.8mm. Combined with the low thermal resistance of the
die level device, this makes the FlipFET™ the best device
for applications where printed circuit board space is at a
premium and in extremely thin application environments
such as battery packs, cell phones and PCMCIA cards.
Absolute Maximum Ratings
Parameter
V
Source- Source Voltage
SS
I
@ T
= 25°C
Continuous Current, V
S
C
I
@ T
= 70°C
Continuous Current, V
S
C
I
Pulsed Current 
SM
P
@T
= 25°C
Power Dissipation
D
C
P
@T
= 70°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
T
T
Junction and Storage Temperature Range
J,
STG
Thermal Resistance
Symbol
Parameter
R
Junction-to-Ambient
θJA
R
Junction-to-PCB mounted
θJ-PCB
www.irf.com
OBSOLETE
V
SS
-20V
0.036
0.052

*
= V
= -4.5V
GS1
GS2
= V
= -4.5V
GS1
GS2
Typ.
ƒ
17
IRF6150
®
HEXFET
Power MOSFET
R
max
I
SS(on)
S
@V
= -4.5V -7.9A
GS1,2
@V
= -2.5V -6.3A
GS1,2

*
Max.
Units
-20
V
±7.9
±6.3
A
±40
3.0
1.9
24
mW/°C
± 12
V
-55 to + 150
°C
Max.
Units
42
°C/W
–––
1

IRF6150 Summary of contents

  • Page 1

    ... Parameter R Junction-to-Ambient θJA R Junction-to-PCB mounted θJ-PCB www.irf.com OBSOLETE V SS -20V 0.036 0.052  * = V = -4.5V GS1 GS2 = V = -4.5V GS1 GS2 Typ. ƒ 17 IRF6150 ® HEXFET Power MOSFET R max I SS(on -4.5V -7.9A Ω GS1 -2.5V -6.3A Ω GS1 Max. Units -20 V ±7.9 ±6.3 A ±40 3 ...

  • Page 2

    Electrical Characteristics @ T Parameter V Source-to-Source Breakdown Voltage (BR)SSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)SSS J R Static Source-to-Source On-Resistance SS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Zero Gate Voltage Source Current SSS Gate-to-Source ...

  • Page 3

    Bi-Directional MOSFET Outline Dimension " !" ' # Y Y b"!d b %d www.irf.com OBSOLETE IPU@T) ÃÃ6GGÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃbDI8Cd "ÃÃG@UU@SÃ9@TDBI6UDPI) TÃ2ÃTPVS8@ BÃ2ÃB6U@ ...