IRF6150 International Rectifier, IRF6150 Datasheet

IRF6150

Manufacturer Part Number

IRF6150

Description

MOSFET 2P-CH 20V 7.9A FLIP-FET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6150.pdf (3 pages)

Specifications of IRF6150

Fet Type

2 P-Channel (Dual)

Fet Feature

Standard

Rds On (max) @ Id, Vgs

36 mOhm @ 7.9A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

7.9A

Vgs(th) (max) @ Id

1.2V @ 250µA

Power - Max

Mounting Type

Surface Mount

Package / Case

FlipFet™-16

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Gate Charge (qg) @ Vgs

Other names

IRF6150TR

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Description

True chip-scale packaging is available from International

Rectifier. Through the use of advanced processing tech-

niques and a unique packaging concept, extremely low

on-resistance and the highest power densities in the

industry have been made available for battery and load

management applications. These benefits, combined with

the ruggedized device design that International Rectifier

is well known for,

tremely efficient and reliable device.

The FlipFET™ package, is one-third the footprint of a

comparable SO-8 package and has a profile of less than

.8mm. Combined with the low thermal resistance of the

die level device, this makes the FlipFET™ the best device

for applications where printed circuit board space is at a

premium and in extremely thin application environments

such as battery packs, cell phones and PCMCIA cards.

Absolute Maximum Ratings

Thermal Resistance

Symbol

www.irf.com

θJA

θJ-PCB

@ T

Bi-Directional P-Channel Switch

Ultra Low

Low

Super Low Profile (<.8mm)

Available Tested on Tape & Reel

STG

= 25°C

= 70°C

= 25°C

= 70°C

Thermal Resistance

provides the designer with an ex-

SS(on)

Junction-to-PCB mounted

Source- Source Voltage

Continuous Current, V

Pulsed Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Junction-to-Ambient

per Footprint Area

Parameter

GS1

= V

GS2

OBSOLETE

= -4.5V

-20V

Typ.

0.036

0.052

HEXFET

-55 to + 150

Ω

Max.

SS(on)

±7.9

±6.3

±40

± 12

-20

3.0

1.9

GS1,2

IRF6150

Power MOSFET

max

Max.

–––

= -4.5V -7.9A

= -2.5V -6.3A

mW/°C

Units

°C/W

°C

Related parts for IRF6150

IRF6150 Summary of contents

Page 1

... Parameter R Junction-to-Ambient θJA R Junction-to-PCB mounted θJ-PCB www.irf.com OBSOLETE V SS -20V 0.036 0.052 * = V = -4.5V GS1 GS2 = V = -4.5V GS1 GS2 Typ. ƒ 17 IRF6150 ® HEXFET Power MOSFET R max I SS(on -4.5V -7.9A Ω GS1 -2.5V -6.3A Ω GS1 Max. Units -20 V ±7.9 ±6.3 A ±40 3 ...

Page 2

Electrical Characteristics @ T Parameter V Source-to-Source Breakdown Voltage (BR)SSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)SSS J R Static Source-to-Source On-Resistance SS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Zero Gate Voltage Source Current SSS Gate-to-Source ...

Page 3

Bi-Directional MOSFET Outline Dimension " !" ' # Y Y b"!d b %d www.irf.com OBSOLETE IPU@T) ÃÃ6GGÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃbDI8Cd "ÃÃG@UU@SÃ9@TDBI6UDPI) TÃ2ÃTPVS8@ BÃ2ÃB6U@ ...

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