IRF5852 International Rectifier, IRF5852 Datasheet

MOSFET 2N-CH 20V 2.7A 6-TSOP

IRF5852

Manufacturer Part Number
IRF5852
Description
MOSFET 2N-CH 20V 2.7A 6-TSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF5852

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 2.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
1.25V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Input Capacitance (ciss) @ Vds
400pF @ 15V
Power - Max
960mW
Mounting Type
Surface Mount
Package / Case
Micro6™(TSOP-6)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF5852TRPBF
Manufacturer:
IR
Quantity:
17 800
Part Number:
IRF5852TRPBF
Manufacturer:
IR
Quantity:
20 000
Description
l
l
l
l
l
Absolute Maximum Ratings
Thermal Resistance
These N-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two
die per package, the IRF5852 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and R
reduction enables an increase in current-handling
capability.
R
www.irf.com
V
I
I
I
P
P
V
T
D
D
DM
DS
D
D
GS
J,
@ T
@ T
JA
Ultra Low On-Resistance
Dual N-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Maximum Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Parameter
Parameter
ƒ
ƒ
GS
GS
ƒ
@ 4.5V
@ 4.5V
DS(on)
V
20 V
DSS
TSOP-6
HEXFET
R
0.090@V
0.120@V
-55 to + 150
DS(on)
Max.
Max.
130
0.96
0.62
± 12
2.7
2.2
7.7
20
11
max (W)
GS
GS
®
G2
G1
S2
IRF5852
Power MOSFET
= 4.5V
= 2.5V
2
3
1
Top View
PD - 93999A
2.7A
2.2A
mW/°C
I
Units
Units
°C/W
D
6
5
4
°C
V
A
V
D2
D1
S1
1
1/13/03

Related parts for IRF5852

IRF5852 Summary of contents

Page 1

... This Dual TSOP-6 package is ideal for applications where printed circuit board space premium and where maximum functionality is required. With two die per package, the IRF5852 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and R reduction enables an increase in current-handling capability ...

Page 2

... IRF5852 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... V Fig 2. Typical Output Characteristics 2 1.5 ° 150 C J 1.0 0.5 0.0 3.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF5852 VGS 7.5V 4.5V 3.5V 3.0V 2.5V 2.0V 1.75V 1.5V 1.50V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage ( ...

Page 4

... IRF5852 600 1MHz iss rss gd 500 oss iss 400 300 200 100 C oss C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 150 C ° ° 0.1 0.4 0.6 0.8 1.0 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

... RESPONSE) 0.1 0.00001 0.0001 Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF5852 + - d(off Notes thJA A 0.1 ...

Page 6

... IRF5852 0.14 0.12 0. 2.7A 0.08 0.06 2.0 3.0 4.0 5.0 V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge Fig 13a. Basic Gate Charge Waveform 6 0.30 0.20 0.10 0.00 0 6.0 7.0 8.0 Fig 12. Typical On-Resistance Vs. Drain 12V V GS Fig 13b. Gate Charge Test Circuit ...

Page 7

... Temperature ( °C ) Fig 14. Threshold Voltage Vs. Tempera- ture www.irf.com 250µ 0.001 75 100 125 150 IRF5852 0.010 0.100 1.000 10.000 Time (sec) Typical Power Vs. Time 7 ...

Page 8

... IRF5852 8 www.irf.com ...

Page 9

... EXAMPLE: T HIS I3443DV PART NUMBER WAFER LOT NUMBER CODE PART NUMBER CODE REFERENCE SI3443DV 3B = IRF5800 3C = IRF5850 3D = IRF5851 3E = IRF5852 3I = IRF5805 3J = IRF5806 DATE CODE EXAMPLES: YWW = 9603 = 6C YWW = 9632 = FF Notes : T his part marking information applies to devices produced after 02/26/2001 PART NUMBER PART NUMB ER CODE REFERENCE: ...

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