IRF7103Q International Rectifier, IRF7103Q Datasheet

MOSFET N-CH 50V 3A 8-SOIC

IRF7103Q

Manufacturer Part Number
IRF7103Q
Description
MOSFET N-CH 50V 3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7103Q

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
255pF @ 25V
Power - Max
2.4W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
3A
Drain Source Voltage Vds
50V
On Resistance Rds(on)
130mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
No
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7103Q

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7103QPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7103QTRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7103QTRPBF
Quantity:
4 000
Benefits
Description
Specifically designed for Automotive applications, these
HEXFET
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
in Tape & Reel.
Absolute Maximum Ratings
Thermal Resistance
Typical Applications
I
I
I
P
V
E
I
E
dv/dt
T
Symbol
R
R
www.irf.com
D
D
DM
AR
J,
D
GS
AS
AR
@ T
@ T
JL
JA
@T
T
Anti-lock Braking Systems (ABS)
Electronic Fuel Injection
Power Doors, Windows & Seats
Advanced Process Technology
Dual N-Channel MOSFET
Ultra Low On-Resistance
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Automotive [Q101] Qualified
STG
C
C
C
®
= 25°C
= 70°C
= 25°C
Power MOSFET's in a Dual SO-8 package utilize
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy„
Avalanche Current
Repetitive Avalanche Energy†
Peak Diode Recovery dv/dt …
Junction and Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
Parameter
Parameter
ƒ
AUTOMOTIVE MOSFET
ƒ
GS
GS
@ 4.5V
@ 4.5V
G2
G1
S2
S1
V
50V
DSS
1
2
3
4
Top View
See Fig.16c, 16d, 19, 20
Typ.
–––
–––
R
HEXFET
8
7
6
5
DS(on)
200@V
130@V
-55 to + 175
D1
D1
D2
D2
Max.
± 20
3.0
2.5
2.4
25
16
22
12
max (mW)
GS
GS
®
= 4.5V
Power MOSFET
= 10V
IRF7103Q
Max.
62.5
20
SO-8
3.0A
1.5A
mW/°C
I
Units
Units
D
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1

Related parts for IRF7103Q

IRF7103Q Summary of contents

Page 1

... STG Thermal Resistance Symbol Parameter R Junction-to-Drain Lead JL R Junction-to-Ambient JA www.irf.com AUTOMOTIVE MOSFET V DSS 50V Top View @ 4. 4.5V GS ƒ See Fig.16c, 16d, 19, 20 ƒ IRF7103Q ® HEXFET Power MOSFET R max (mW) I DS(on) D 130@V = 10V 3.0A GS 200@V = 4.5V 1. SO-8 Max. Units 3.0 2 ...

Page 2

... IRF7103Q Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... BOTTOM 4.5V 1 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 2 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 12.0 15.0 Fig 4. Normalized On-Resistance IRF7103Q VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 20µs PULSE WIDTH Tj = 175° Drain-to-Source Voltage (V) 3. 10V 100 120 140 160 180 ° ...

Page 4

... IRF7103Q 10000 0V MHZ C iss = rss = oss = 1000 Ciss Coss 100 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 ° 175 0.1 0.4 0.6 0.8 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 0 Fig 6. Typical Gate Charge Vs. 100 10 1 ° ...

Page 5

... Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms 0.001 0.01 0 Rectangular Pulse Duration (sec) IRF7103Q + - d(off) f Notes: 1. Duty Factor D = t1/t2 2. Peak Zthja + 100 5 ...

Page 6

... IRF7103Q 0.15 0.14 0.13 0. 3.0A 0.11 0.10 0.09 4.5 6.0 7.5 9.0 10.5 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 2.0 1.8 1.5 1.3 1.0 -75 -50 - Temperature ( °C ) Fig 14. Typical Threshold Voltage Vs. Junction Temperature 6 2.500 2.000 4.5V 1.500 1.000 ...

Page 7

... Current Sampling Resistors Fig 17. Gate Charge Test Circuit www.irf.com I D TOP 1.2A 2.5A BOTTOM 3. Fig 16c. Unclamped Inductive Test Circuit 125 150 175 ° Fig 16d. Unclamped Inductive Waveforms Fig 18. Basic Gate Charge Waveform IRF7103Q 15V DRIVER D.U 20V 0. (BR)DSS Charge ...

Page 8

... IRF7103Q 1000 Duty Cycle = Single Pulse 100 10 0.01 1 0.05 0.10 0.1 0.01 1.0E-08 1.0E-07 1.0E-06 Fig 19. Typical Avalanche Current Vs.Pulsewidth 25 TOP Single Pulse BOTTOM 10% Duty Cy cle 3. 100 Starting Junction Temperature (°C) Fig 20. Maximum Avalanche Energy Vs. Temperature 8 1.0E-05 1.0E-04 1.0E-03 tav (sec) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www ...

Page 9

... YÃG & %#%Ãb!$$d "YÃ !&Ãb$d 96U Ã8P9 Ã`XX `Ã2ÃG6TUÃ9DBDUÃPAÃUC Ã` 6S XXÃ2ÃX F <:: ;;;; GPUÃ8P9  Q6SUÃIVH7 S IRF7103Q DI8C@T HDGGDH@U@ST 9DH HDI H6Y HDI H6Y 6 $"! %'' "$ &$ 6 # (' ...

Page 10

... IRF7103Q SO-8 Tape and Reel TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. This product has been designed and qualified for the Automotive [Q101] market. ...

Related keywords