IRF7751 International Rectifier, IRF7751 Datasheet

MOSFET 2P-CH 30V 4.5A 8-TSSOP

IRF7751

Manufacturer Part Number
IRF7751
Description
MOSFET 2P-CH 30V 4.5A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7751

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
44nC @ 10V
Input Capacitance (ciss) @ Vds
1464pF @ 25V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7751TRPBF
Quantity:
10 420
Description
l
l
l
l
l
HEXFET
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
signer with an extremely efficient and reliable device
for use in battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
V
I
I
I
P
P
V
T
R
D
D
DM
J,
DS
D
D
GS
@ T
@ T
JA
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
@T
@T
T
STG
C
C
C
C
®
= 25°C
= 70°C
= 25°C
= 70°C
power MOSFETs from International Rectifier
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Power Dissipation
Power Dissipation
Parameter
Parameter
provides the de-
ƒ
ƒ
GS
GS
ƒ
@ -10V
@ -10V
2
3
4
1
1 = D1
4 = G1
2 = S 1
3 = S 1
V
-30V
DSS
HEXFET
55m @V
35m @V
8 = D2
7 = S 2
6 = S 2
5 = G2
-55 to +150
R
Max.
0.008
8
7
6
5
Max.
125
DS(on)
0.64
-4.5
-3.6
-30
-18
1.0
±20
®
GS
GS
IRF7751
Power MOSFET
max
= -4.5V
= -10V
TSSOP-8
PD - 94002
-4.5A
-3.8A
Units
Units
I
W/°C
°C/W
D
W
°C
V
A
V
1
10/04/2000

Related parts for IRF7751

IRF7751 Summary of contents

Page 1

... T T Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com V DSS -30V provides the de -10V GS @ -10V GS ƒ ƒ ƒ 94002 IRF7751 ® HEXFET Power MOSFET R max I DS(on) D 35m @V = -10V -4.5A GS 55m @V = -4.5V -3. TSSOP-8 Max. Units -30 V -4.5 -3.6 ...

Page 2

... IRF7751 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... BOTTOM -2.7V 1 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 2.0 -4. 1.5 1.0 0.5 = -15V 0.0 5.0 6.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7751 VGS TOP -10.0V -7.0V -5.5V -4.5V -4.0V -3.5V -3.0V BOTTOM -2.7V -2.7V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage ( -10V ...

Page 4

... IRF7751 4000 1MHz iss rss 3200 oss iss 2400 1600 800 C oss C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 T = 150 C ° 0.1 0.2 0.4 0.6 0.8 1.0 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit t d(on 10% 125 150 ° 90 Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7751 D.U. µ d(off thJA ...

Page 6

... IRF7751 0.100 0.080 0.060 -4.5A 0.040 0.020 3.0 4.0 5.0 6.0 7.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge Waveform 6 0.200 0.150 0.100 VGS = -4.5V 0.050 0.000 8.0 9.0 10.0 0 Fig 13. Typical On-Resistance Vs. ...

Page 7

... TSSOP-8 Package Outline www.irf.com IRF7751 7 ...

Page 8

... IRF7751 TSSOP-8 Tape and Reel Information FEED DIRECT ION 8 mm TSSOP-8 Part Marking EXAMPLE: T HIS IS AN IRF 7702 LOT CODE (XX) XXYW PART NUMBER 7702 DATE CODE EXAMPLES: 9503 = 5C 9532 = EF IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel (0)20 8645 8000 IR JAPAN: K& ...

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