IRF5850TR International Rectifier, IRF5850TR Datasheet
IRF5850TR
Specifications of IRF5850TR
Available stocks
Related parts for IRF5850TR
IRF5850TR Summary of contents
Page 1
... Available in Tape & Reel Low Gate Charge l Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. ...
Page 2
Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...
Page 3
VGS TOP -7.0V -5.0V -4.5V -2.5V -2.0V -1.8V 10 -1.5V BOTTOM -1.2V 1 -1.2V 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 10 ...
Page 4
1MHz iss rss 400 oss iss 300 200 100 C oss ...
Page 5
Fig 9. Maximum Drain Current Vs. Junction Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 SINGLE PULSE 1 (THERMAL RESPONSE) 0.1 0.00001 0.0001 Fig 10. Typical ...
Page 6
-2.2A 0.12 0.08 2.0 3.0 4.0 5.0 -V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge Fig 13a. Basic Gate ...
Page 7
Temperature ( °C ) Fig 14. Threshold Voltage Vs. Temperature www.irf.com -250µ 0.001 75 100 125 150 ...
Page 8
8 www.irf.com ...
Page 9
Notes : T his part marking information applies to devices produced before 02/26/2001 EXAMPLE: T HIS I3443DV PART NUMBER WAFER LOT NUMBER CODE PART NUMBER CODE REFERENCE SI3443DV 3B = IRF5800 3C = IRF5850 3D ...