IRF5851TR International Rectifier, IRF5851TR Datasheet

MOSFET N+P 20V 2.7A 6-TSOP

IRF5851TR

Manufacturer Part Number
IRF5851TR
Description
MOSFET N+P 20V 2.7A 6-TSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF5851.pdf (14 pages)

Specifications of IRF5851TR

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 2.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.7A, 2.2A
Vgs(th) (max) @ Id
1.25V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Input Capacitance (ciss) @ Vds
400pF @ 15V
Power - Max
960mW
Mounting Type
Surface Mount
Package / Case
Micro6™(TSOP-6)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF5851TRPBF
Manufacturer:
NIPPON
Quantity:
30 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF5851TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Thermal Resistance
l
l
l
l
l
Description
These N and P channel MOSFETs from International Rectifier utilize advanced
processing techniques to achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an extremely efficient device for
use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit
board space is at a premium and where maximum functionality is required.
With two die per package, the IRF5851 can provide the functionality of two
SOT-23 packages in a smaller footprint. Its unique thermal design and
R
Absolute Maximum Ratings
R
V
I
I
I
P
P
V
D
D
DM
T
DS(on)
θJA
DS
D
D
GS
J,
@ T
@ T
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
@T
@T
T
STG
A
A
A
A
= 25°C
= 70°C
reduction enables an increase in current-handling capability.
= 25°C
= 70°C
Maximum Junction-to-Ambient ƒ
Drain-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Parameter
GS
GS
@ 10V
@ 10V
G1
G2
S 2
1
2
3
N-Channel
2.7
2.2
20
11
Typ.
–––
HEXFET
-55 to + 150
6
5
4
Max.
D1
S 1
D2
0.96
0.62
± 12
7.7
R
V
®
DS(on)
DSS
IRF5851
Max.
Power MOSFET
130
P-Channel
-2.2
-1.7
-9.0
0.090Ω 0.135Ω
-20
N-Ch
20V
TSOP-6
PD-93998B
P-Ch
-20V
Units
°C/W
mW/°C
°C
W
09/02/02
V
1

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IRF5851TR Summary of contents

Page 1

... Available in Tape & Reel l Low Gate Charge Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. ...

Page 2

IRF5851 Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Q ...

Page 3

VGS TOP 7.5V 4.5V 3.5V 3.0V 2.5V 2.0V 1.75V BOTTOM 1. 1.50V 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ° T ...

Page 4

IRF5851 600 1MHz iss rss gd 500 oss iss 400 300 200 100 C oss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 SINGLE PULSE 1 ...

Page 6

IRF5851 0.14 0.12 0. 2.7A 0.08 0.06 2.0 3.0 4.0 5.0 V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge Fig ...

Page 7

Temperature ( °C ) Fig 14. Threshold Voltage Vs. Tempera- ture www.irf.com N-Channel 250µ 0.001 75 ...

Page 8

IRF5851 100 VGS TOP -7.0V -5.0V -4.5V -2.5V -2.0V -1.8V 10 -1.5V BOTTOM -1.2V 1 -1.2V 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 16. Typical Output Characteristics 10 ...

Page 9

1MHz iss rss 400 oss iss 300 200 100 C oss C rss ...

Page 10

IRF5851 2.5 2.0 1.5 1.0 0.5 0 100 Fig 24. Maximum Drain Current Vs. Junction Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 SINGLE PULSE 1 (THERMAL RESPONSE) 0.1 0.00001 0.0001 Fig 26. ...

Page 11

-2.2A 0.12 0.08 2.0 3.0 4.0 5.0 -V GS, Gate -to -Source Voltage (V) Fig 27. Typical On-Resistance Vs. Gate Voltage Charge Fig 29a. Basic Gate ...

Page 12

IRF5851 1.0 0.8 0.6 0.4 -75 -50 - Temperature ( °C ) Fig 30. Threshold Voltage Vs. Temperature 12 P-Channel -250µ 100 125 ...

Page 13

Note: This part marking information applies to devices produced before 02/26/2001. EXAMPLE: T HIS IS AN SI3443DV PART NUMBER 3A WAFER LOT NUMBER CODE XXXX BOT T OM PART NUMBER CODE REFERENCE I3443DV 3B = IRF5800 3C ...

Page 14

IRF5851 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 14 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found ...

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