IRF7751TR International Rectifier, IRF7751TR Datasheet

IRF7751TR

Manufacturer Part Number

IRF7751TR

Description

MOSFET 2P-CH 30V 4.5A 8-TSSOP

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7751.pdf (8 pages)

Specifications of IRF7751TR

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

35 mOhm @ 4.5A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

4.5A

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

44nC @ 10V

Input Capacitance (ciss) @ Vds

1464pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-TSSOP

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

H&T Electronics

Part Number:

IRF7751TRPBF

Quantity:

10 420

Current page: 1 of 8
Download datasheet (163Kb)

Description

HEXFET

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for,

signer with an extremely efficient and reliable device

for use in battery and load management.

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.2mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

@ T

Ultra Low On-Resistance

Dual P-Channel MOSFET

Very Small SOIC Package

Low Profile (< 1.2mm)

Available in Tape & Reel

STG

= 25°C

= 70°C

= 25°C

= 70°C

power MOSFETs from International Rectifier

Drain-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Power Dissipation

Parameter

provides the de-

@ -10V

1 = D1

4 = G1

2 = S 1

3 = S 1

-30V

DSS

HEXFET

55m @V

35m @V

8 = D2

7 = S 2

6 = S 2

5 = G2

-55 to +150

Max.

0.008

Max.

125

DS(on)

0.64

-4.5

-3.6

-30

-18

1.0

±20

IRF7751

Power MOSFET

max

= -4.5V

= -10V

TSSOP-8

PD - 94002

-4.5A

-3.8A

Units

W/°C

°C/W

°C

10/04/2000

Related parts for IRF7751TR

IRF7751TR Summary of contents

Page 1

... Available in Tape & Reel l Description ® HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- national Rectifier is well known for, signer with an extremely efficient and reliable device for use in battery and load management ...

Page 2

IRF7751 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRF7751TR International Rectifier, IRF7751TR Datasheet

IRF7751TR

Specifications of IRF7751TR

Available stocks

Related parts for IRF7751TR

IRF7751TR Summary of contents

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