IRF7752TR International Rectifier, IRF7752TR Datasheet

IRF7752TR

Manufacturer Part Number

IRF7752TR

Description

MOSFET 2N-CH 30V 4.6A 8-TSSOP

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7752.pdf (7 pages)

Specifications of IRF7752TR

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

30 mOhm @ 4.6A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

4.6A

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

9nC @ 4.5V

Input Capacitance (ciss) @ Vds

861pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-TSSOP

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF7752TRPBF

Manufacturer:

MAXIM

Quantity:

1 001

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7752TRPBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 7
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Description

HEXFET

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design , that Inter-

national Rectifier is well known for,

with an extremely efficient and reliable device for use

in battery and load management.

The TSSOP-8 package, has 45% less footprint area of the

standard SO-8. This makes the TSSOP-8 an ideal device

for applications where printed circuit board space is at a

premium.

The low profile (<1.1mm) of the TSSOP-8 will allow it to fit

easily into extremely thin application environments such

as portable electronics and PCMCIA cards.

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

@ T

Dual N-Channel MOSFET

Ultra Low On-Resistance

Very Small SOIC Package

Low Profile (< 1.1mm)

Available in Tape & Reel

STG

= 25°C

= 70°C

= 25°C

= 70°C

power MOSFETs from International Rectifier

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Power Dissipation

Parameter

provides thedesigner

@ 10V

1 = D1

4 = G1

2 = S 1

3 = S 1

30V

DSS

HEXFET

5 = G2

8 = D2

7 = S 2

6 = S 2

0.036@V

0.030@V

-55 to + 150

Max.

125

DS(on)

±4.6

±3.7

0.64

±37

± 12

1.0

8.0

IRF7752

Power MOSFET

max

= 4.5V

= 10V

TSSOP-8

PD -94030A

4.6A

3.9A

mW/°C

Units

°C/W

°C

3/25/01

Related parts for IRF7752TR

IRF7752TR Summary of contents

Page 1

... Low Profile (< 1.1mm) Available in Tape & Reel l Description ® HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that Inter- provides thedesigner national Rectifier is well known for, with an extremely efficient and reliable device for use in battery and load management ...

Page 2

IRF7752 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

PULSE WIDTH Tj = 25°C 0.01 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 T = 150 C ° ° J ...

Page 4

IRF7752 1400 1MHz iss 1200 rss oss ds gd 1000 C iss 800 600 C oss 400 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL ...

Page 6

IRF7752 0.080 0.060 0.040 4.6A 0.020 0.000 2.0 3.0 4.0 5.0 6.0 V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge ...

Page 7

TSSOP-8 Package Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can ...

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