IRF7755TR International Rectifier, IRF7755TR Datasheet

IRF7755TR

Manufacturer Part Number

IRF7755TR

Description

MOSFET 2P-CH 20V 3.9A 8-TSSOP

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7755.pdf (8 pages)

Specifications of IRF7755TR

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

51 mOhm @ 3.7A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

3.9A

Vgs(th) (max) @ Id

1.2V @ 250µA

Gate Charge (qg) @ Vgs

17nC @ 4.5V

Input Capacitance (ciss) @ Vds

1090pF @ 15V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-TSSOP

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

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Thermal Resistance

Absolute Maximum Ratings

Description

www.irf.com

HEXFET

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for,

with an extremely efficient and reliable device for

battery and load management.

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.2mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

@ T

, T

Dual P-Channel MOSFET

Ultra Low On-Resistance

Very Small SOIC Package

Low Profile (< 1.2mm)

Available in Tape & Reel

STG

= 25°C

= 70°C

= 25°C

= 70°C

Power MOSFETs from International Rectifier

Gate-to-Source Voltage

Linear Derating Factor

Drain-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Parameter

provides thedesigner

@ -4.5V

1 = D1

4 = G1

2 = S1

3 = S1

-20V

DSS

HEXFET

8 = D2

5 = G2

7 = S2

6 = S2

51m @V

86m @V

-55 to +150

Max.

125

DS(on)

Max.

0.64

0.01

-3.9

-3.1

-20

-15

±20

IRF7755

Power MOSFET

max

= -4.5V

= -2.5V

TSSOP-8

PD -93995A

3.7A

2.8A

Units

W/°C

°C/W

°C

4/9/01

Related parts for IRF7755TR

IRF7755TR Summary of contents

Page 1

... Low Profile (< 1.2mm) Available in Tape & Reel Description ® HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- provides thedesigner national Rectifier is well known for, with an extremely efficient and reliable device for battery and load management ...

Page 2

IRF7755 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150 C ° J ° ...

Page 4

IRF7755 1600 1MHz iss rss oss ds gd 1200 C iss 800 400 C oss C rss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) ...

Page 6

IRF7755 0.160 0.120 0.080 -3.7A 0.040 0.000 2.0 3.0 4.0 5.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig ...

Page 7

TSSOP-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7702 LOT CODE (XX) XXYW PART NUMBER 7702 DAT E CODE EXAMPLES : 9503 = 5C 9532 = EF TSSOP-8 Tape and Reel 8 mm www.irf.com DAT E CODE (YW) T ...

Page 8

IRF7755 TSSOP-8 Package Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards ...

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