IRF6156 International Rectifier, IRF6156 Datasheet

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IRF6156

Manufacturer Part Number
IRF6156
Description
MOSFET 2N-CH 20V 6.5A FLIP-FET
Manufacturer
International Rectifier
Datasheet
1.IRF6156.pdf (13 pages)

Specifications of IRF6156

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 6.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 5V
Input Capacitance (ciss) @ Vds
950pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
6-FlipFet™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF6156
www.irf.com
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Description
True chip-scale packaging is available from International Recti-
fier. Through the use of advanced processing techniques and a
unique packaging concept, extremely low on-resistance and the
highest power densities in the industry have been made available
for battery and load management applications. These benefits,
combined with the ruggedized device design that International
Rectifier is well known for,
extremely efficient and reliable device.
The FlipFET™ package, is one-fifth the footprint of a comparable
TSSOP-8 package and has a profile of less than .8mm. Com-
bined with the low thermal resistance of the die level device, this
makes the FlipFET™ the best device for applications where
printed circuit board space is at a premium and in extremely thin
application environments such as battery packs, mobile phones
and PCMCIA cards.
V
I
I
I
P
P
V
T
T
R
R
Absolute Maximum Ratings
Thermal Resistance
S
S
SM
J
STG
SS
D
D
GS
θJA
θJ-PCB
@ T
@ T
Bi-Directional N-Channel Switch
@T
@T
Ultra Low
Low
Super Low Profile (<.8mm)
Available Tested on Tape & Reel
ESD Protection Diode
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Thermal Resistance
R
Source-to-Source Voltage
Continuous Current, V
Continuous Current, V
Pulsed Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Junction-to-Ambient
Junction-to-PCB
SS(on)
per Footprint Area
provide the designer with an
†
c
Parameter
Parameter
GS1
GS1
= V
= V
GS2
GS2
= 4.5V
= 4.5V
V
20V
SS
40m @V
60m @V
Typ.
–––
35
R
-55 to + 150
SS(on)
FlipFET™
Max.
±6.5
±5.2
2.5
1.6
±12
20
33
20
GS1,2
GS1,2
max
Max.
–––
IRF6156
= 4.5V
= 2.5V
50
Power MOSFET
mW/°C
Units
Units
±6.5
±5.2
°C/W
°C
I
W
V
A
V
S
1

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IRF6156 Summary of contents

Page 1

... Parameter Junction-to-Ambient R θJA R Junction-to-PCB θJ-PCB www.irf.com 40m @V 20V 60m @ 4.5V GS1 GS2 = V = 4.5V GS1 GS2 Typ. ––– 35 IRF6156 FlipFET™ Power MOSFET max I SS(on 4.5V ±6.5 GS1,2 = 2.5V ±5.2 GS1,2 Max. Units 20 V ±6.5 ±5 2.5 W 1.6 20 mW/°C ± ...

Page 2

Electrical Characteristics @ T Parameter V Source-to-Source Breakdown Voltage (BR)SSS ∆V /∆T Breakdown Voltage Temp. Coefficient ––– (BR)SSS J R Static Source-to-Source On-Resistance ––– SS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Zero Gate Voltage Source Current SSS ...

Page 3

PULSE WIDTH Tj = 25°C 0.01 0 Source-to-Source Voltage (V) Fig 1. Typical Output Characteristics. „ 100. 25° 150°C 10. ...

Page 4

6.5A 0 1.0 2.0 3.0 4.0 5.0 V GS, Gate -to -Source Voltage (V) Fig 5. Typical On-Resistance vs. Gate Voltage. … ...

Page 5

6. 4.5V 1.5 1.0 0.5 -60 -40 - 100 120 140 160 Junction Temperature (°C) Fig 8. Normalized On-Resistance vs. Temperature. … ...

Page 6

S1 2. Fig 11a R is symmetrical and can be measured when connected as shown SS(on) 10000 1000 100 2.5V 4. either figures 11a or 11b. V ...

Page 7

1µF G1 High Capacitance S1 Bridge 10MΩ Low Fig 13a Ciss capacitance is symmetrical and can be measured as shown either in figures 13a or 13b Capacitance 1µF Bridge ...

Page 8

6.5A 5 16V 10V 4.0 3.0 2.0 1.0 0 Total Gate Charge (nC) Fig 14. Typical Gate Charge vs. Gate-to-Source Voltage. Current Regulator ...

Page 9

OPERATION IN THIS AREA LIMITED (on) 10 1msec 25° 150°C Single Pulse 0 Source-to-Source Voltage (V) Fig 15. Maximum Safe Operating Area ...

Page 10

Time (sec) Fig 18. Typical Power vs. Time. 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 Fig ...

Page 11

10ohm 6ohm G1 S1 4.5V Fig 21a Switching times are symmetrical and can be measured as shown V GS 10% 90 Fig 21c. Switching Time Waveforms. www.irf.com 4.5V 6ohm + V ...

Page 12

Fig 22a Fig 23a I and V are symmetrical and can be measured when connected SSS (BR)SSS Test Connection GSS G2 ...

Page 13

Bi-Directional MOSFET Pinout Outline Dimension and Tape and Reel Information Drawing No. 01-0115  Ã $!# "!d  $Ã !' Ãb d !# Ãb (#d 8 $"&Ã ...

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