IRF7103QTRPBF International Rectifier, IRF7103QTRPBF Datasheet

MOSFET N-CH 50V 3A 8-SOIC

IRF7103QTRPBF

Manufacturer Part Number
IRF7103QTRPBF
Description
MOSFET N-CH 50V 3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7103QTRPBF.pdf (10 pages)

Specifications of IRF7103QTRPBF

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
255pF @ 25V
Power - Max
2.4W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7103QTRPBFCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF7103QTRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRF7103QTRPBF
Quantity:
4 000
Benefits
Absolute Maximum Ratings
I
I
I
P
V
E
I
E
dv/dt
T
T
Thermal Resistance
R
R
Description
This HEXFET
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET's are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to make
this design an extremely efficient and reliable device for use
in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available
www.irf.com
D
D
DM
AR
J
STG
D
GS
AS
AR
JL
JA
@ T
@ T
@T
Advanced Process Technology
Dual N-Channel MOSFET
Ultra Low On-Resistance
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
A
A
A
= 25°C
= 70°C
= 25°C
®
in Tape & Reel.
Power MOSFET's in a Dual SO-8 package
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
Parameter
Parameter
e
fg
g
GS
GS
h
@ 4.5V
@ 4.5V
f
G2
G1
S2
S1
V
50V
DSS
1
2
3
4
Top View
See Fig. 16c, 16d, 19, 20
Typ.
–––
–––
IRF7103QPbF
R
-55 to + 175
HEXFET
8
7
6
5
DS(on)
200@V
130@V
Max.
± 20
3.0
2.5
2.4
25
16
22
12
D1
D1
D2
D2
max (mW)
GS
GS
Max.
®
62.5
20
= 4.5V
Power MOSFET
= 10V
SO-8
Units
Units
3.0A
1.5A
W/°C
°C/W
V/ns
mJ
mJ
I
°C
W
A
V
A
D
1

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IRF7103QTRPBF Summary of contents

Page 1

Benefits Advanced Process Technology Dual N-Channel MOSFET Ultra Low On-Resistance 175°C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Lead-Free Description ® This HEXFET Power MOSFET Dual SO-8 package utilize the lastest processing techniques to achieve extremely low ...

Page 2

IRF7103QPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 20µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100. 175° ...

Page 4

IRF7103QPbF 10000 0V, C iss = rss = oss = 1000 Ciss Coss 100 Crss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE ...

Page 6

IRF7103QPbF 0.15 0.14 0.13 0. 3.0A 0.11 0.10 0.09 4.5 6.0 7.5 9.0 10.5 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 2.0 1.8 1.5 1.3 1.0 -75 -50 -25 0 ...

Page 7

Starting T , Junction Temperature ( C) J Fig 16a. Maximum Avalanche Energy Vs. Drain Current Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U.T. V ...

Page 8

IRF7103QPbF 1000 Duty Cycle = Single Pulse 100 10 0.01 1 0.05 0.10 0.1 0.01 1.0E-08 1.0E-07 1.0E-06 Fig 19. Typical Avalanche Current Vs.Pulsewidth 25 TOP Single Pulse BOTTOM 10% Duty Cycle 3. ...

Page 9

SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENSIONING & T ...

Page 10

IRF7103QPbF SO-8 Tape and Reel TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING ...

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