IRF7343QTRPBF International Rectifier, IRF7343QTRPBF Datasheet

MOSFET N/P-CH 55V 8-SOIC

IRF7343QTRPBF

Manufacturer Part Number
IRF7343QTRPBF
Description
MOSFET N/P-CH 55V 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7343QTRPBF

Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 mOhm @ 4.7A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
4.7A, 3.4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
740pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7343QTRPBFCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7343QTRPBF
Manufacturer:
TI/NSC
Quantity:
8 322
Part Number:
IRF7343QTRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
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These HEXFET
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating.These benefits combine to make
this design an extremely efficient and reliable device for use
in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available
θ
Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
in Tape & Reel.
®
Power MOSFET's in a Dual SO-8 package

ƒ
G2
G1
S2
S1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
1
2
3
4
Top View
IRF7343QPBF
8
7
6
5
D1
D1
D2
D2
SO-8
®
DS(on)
DSS
PD - 96110A
1

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IRF7343QTRPBF Summary of contents

Page 1

Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free l ® These HEXFET Power MOSFET Dual SO-8 package ...

Page 2

IRF7343QPbF (BR)DSS ∆ ∆ (BR)DSS J DS(ON) GS(th) fs DSS GSS d(on) r d(off) f iss oss rss  ‚ N-Channel I ≤ ≤ SD ≤ ≤ P-Channel I SD ƒ N-Channel ...

Page 3

VGS TOP 15V 12V 10V 8.0V 4.5V 6.0V 4.0V 3.5V BOTTOM 3.0V 10 3.0V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS 100 ° ...

Page 4

IRF7343QPbF 2.5 4. 2.0 1.5 1.0 0.5 0.0 -60 -40 - 100 120 140 160 T , Junction Temperature ( C) J 0.12 0.10 0. 4.7A D 0.06 0.04 0 ...

Page 5

1MHz iss rss gd 1000 oss iss 800 600 400 C oss 200 C ...

Page 6

IRF7343QPbF 100 VGS TOP -15V -12V -10V -8.0V -6.0V -4.5V -4.0V -3.5V BOTTOM -3.0V 10 -3.0V 1 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS 100 ° ...

Page 7

1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature ( C) J 0.45 0. 0.15 0. Gate-to-Source ...

Page 8

IRF7343QPbF 1200 1MHz iss rss 960 oss iss 720 480 C oss 240 C ...

Page 9

SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

Page 10

IRF7343QPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 ...

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