MOSFET 2N-CH 30V 4.1A 8-SOIC

 

MMDF3N03HDR2

Manufacturer Part NumberMMDF3N03HDR2
DescriptionMOSFET 2N-CH 30V 4.1A 8-SOIC
ManufacturerON Semiconductor
MMDF3N03HDR2 datasheets

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Specifications of MMDF3N03HDR2

Fet Type2 N-Channel (Dual)Fet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs70 mOhm @ 3A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C4.1AVgs(th) (max) @ Id3V @ 250µA
Gate Charge (qg) @ Vgs16nC @ 10VInput Capacitance (ciss) @ Vds630pF @ 24V
Power - Max2WMounting TypeSurface Mount
Package / Case8-SOIC (3.9mm Width)Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other namesMMDF3N03HDR2OSTR  
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Preferred Device
N–Channel SO–8, Dual
These miniature surface mount MOSFETs feature ultra low R DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives. The
avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
Ultra Low R DS(on) Provides Higher Efficiency and Extends Battery
Life
Logic Level Gate Drive – Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package – Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
I DSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(T J = 25 C unless otherwise noted)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (R GS = 1.0 M )
Gate–to–Source Voltage – Continuous
Drain Current – Continuous @ T A = 25 C
Drain Current
– Continuous @ T A = 100 C
Drain Current
– Single Pulse (t p
10 s)
Total Power Dissipation @ T A = 25 C
(Note 1.)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche
Energy – Starting T J = 25 C
(V DD = 30 Vdc, V GS = 5.0 Vdc, Peak
I L = 9.0 Apk, L = 8.0 mH, R G = 25 )
Thermal Resistance – Junction to Ambient
(Note 1.)
Maximum Lead Temperature for Soldering
Purposes, 1/8 from case for 10 seconds
1. When mounted on 2 square FR–4 board (1 square 2 oz. Cu 0.06 thick
single sided) with one die operating, 10s max.
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 7
8
Symbol
Value
Unit
V DSS
30
Vdc
V DGR
30
Vdc
V GS
20
Vdc
I D
4.1
Adc
I D
3.0
I DM
40
Apk
P D
2.0
Watts
T J , T stg
– 55 to
C
150
E AS
324
mJ
R JA
62.5
C/W
Device
T L
260
C
MMDF3N03HDR2
Preferred devices are recommended choices for future use
and best overall value.
1
http://onsemi.com
3 AMPERES
30 VOLTS
R DS(on) = 70 mW
N–Channel
MARKING
DIAGRAM
SO–8, Dual
D3N03
CASE 751
LYWW
STYLE 11
1
L
= Location Code
Y
= Year
WW
= Work Week
PIN ASSIGNMENT
Source–1
Drain–1
1
8
Gate–1
2
7
Drain–1
Source–2
Drain–2
3
6
4
5
Gate–2
Drain–2
Top View
ORDERING INFORMATION
Package
Shipping
SO–8
2500 Tape & Reel
Publication Order Number:
MMDF3N03HD/D

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MMDF3N03HDR2 Summary of contents

  • Page 1

    ... P D 2.0 Watts stg – 150 E AS 324 62.5 C/W Device T L 260 C MMDF3N03HDR2 Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com 3 AMPERES 30 VOLTS R DS(on N–Channel MARKING DIAGRAM SO–8, Dual D3N03 CASE 751 LYWW STYLE 11 1 ...

  • Page 2

    ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage ( Vdc 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc ...

  • Page 3

    TYPICAL ELECTRICAL CHARACTERISTICS Figure 1. On–Region Characteristics Figure 3. On–Resistance versus Gate–to–Source Voltage Figure 5. On–Resistance Variation with Temperature MMDF3N03HD Figure 2. Transfer Characteristics Figure 4. On–Resistance versus Drain Current and Gate Voltage Figure 6. Drain–to–Source Leakage Current versus Voltage ...

  • Page 4

    ... A ratio considered ideal and values less than 0.5 are considered snappy. Compared to ON Semiconductor standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter have less stored charge and a softer reverse recovery characteristic ...

  • Page 5

    The Forward Biased Safe Operating Area curves define the maximum simultaneous drain–to–source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (T ...

  • Page 6

    Figure 10. Resistive Switching Time Variation versus Gate Resistance Figure 12. Maximum Rated Forward Biased Safe Operating Area MMDF3N03HD Figure 11. Diode Forward Voltage versus Current Figure 13. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 6 ...

  • Page 7

    MMDF3N03HD TYPICAL ELECTRICAL CHARACTERISTICS Figure 14. Thermal Response Figure 15. Diode Reverse Recovery Waveform http://onsemi.com 7 ...

  • Page 8

    INFORMATION FOR USING THE SO–8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure ...

  • Page 9

    For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings ...

  • Page 10

    –Y– –Z– MMDF3N03HD PACKAGE DIMENSIONS SO–8 CASE 751–07 ISSUE XXXXXX ALYW http://onsemi.com ...

  • Page 11

    Notes MMDF3N03HD http://onsemi.com 11 ...

  • Page 12

    ... Toll–Free from Mexico: Dial 01–800–288–2872 for Access – then Dial 866–297–9322 ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001– ...

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