NTZD3155CT1G ON Semiconductor, NTZD3155CT1G Datasheet

NTZD3155CT1G

Manufacturer Part Number

NTZD3155CT1G

Description

MOSFET N/P-CH 20V 430MA SOT-563

Manufacturer

ON Semiconductor

Type

Small Signalr

Datasheet

1.NTZD3155CT2G.pdf (8 pages)

Specifications of NTZD3155CT1G

Fet Type

N and P-Channel

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

550 mOhm @ 540mA, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

540mA, 430mA

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

2.5nC @ 4.5V

Input Capacitance (ciss) @ Vds

150pF @ 16V

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-6

Configuration

Dual

Transistor Polarity

N and P-Channel

Resistance Drain-source Rds (on)

0.55 Ohm @ 4.5 V @ N Channel

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 6 V

Continuous Drain Current

0.54 A @ N Channel or 0.43 A @ P Channel

Power Dissipation

250 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Number Of Elements

Polarity

N/P

Channel Mode

Enhancement

Drain-source On-volt

20V

Gate-source Voltage (max)

±6V

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SOT-563

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTZD3155CT1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTZD3155CT1G

Manufacturer:

ON Semiconductor

Quantity:

148 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTZD3155CT1G

Manufacturer:

Quantity:

30 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTZD3155CT1G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

NTZD3155CT1G

Company:

H&T Electronics

Part Number:

NTZD3155CT1G

Quantity:

108 000

Current page: 1 of 8
Download datasheet (112Kb)

NTZD3155C

Small Signal MOSFET

Complementary 20 V, 540 mA / -430 mA,

with ESD protection, SOT-563 package.

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface-mounted on FR4 board using 1 in sq. pad size

May, 2007 - Rev. 2

MAXIMUM RATINGS

Drain-to-Source Voltage

Gate-to-Source Voltage

N-Channel

Continuous Drain

Current (Note 1)

P-Channel

Continuous Drain

Current (Note 1)

Power Dissipation

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode)

Lead Temperature for Soldering Purposes

Leading Trench Technology for Low R

High Efficiency System Performance

Low Threshold Voltage

ESD Protected Gate

Small Footprint 1.6 x 1.6 mm

These are Pb-Free Devices

DC-DC Conversion Circuits

Load/Power Switching with Level Shift

Single or Dual Cell Li-Ion Battery Operated Systems

High Speed Circuits

Cell Phones, MP3s, Digital Cameras, and PDAs

(Cu area = 1.127 in sq [1 oz] including traces).

(Note 1)

(1/8” from case for 10 s)

Parameter

N-Channel

P-Channel

Steady

t v 5 s

Steady

t v 5 s

Steady

t v 5 s

State

= 25°C unless otherwise specified)

= 10 ms

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

DS(on)

Symbol

Performance

DSS

STG

-55 to

Value

-430

-310

-455

1500

-750

540

390

570

250

280

150

350

260

±6

Unit

°C

†For information on tape and reel specifications,

NTZD3155CT1G

NTZD3155CT2G

NTZD3155CT5G

N-Channel

P-Channel

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

(BR)DSS

-20 V

20 V

(Note: Microdot may be in either location)

Device

CASE 463A

SOT-563-6

ORDERING INFORMATION

http://onsemi.com

PINOUT: SOT-563

0.5 W @ -4.5 V

0.6 W @ -2.5 V

1.0 W @ -1.8 V

0.4 W @ 4.5 V

0.5 W @ 2.5 V

0.7 W @ 1.8 V

= Specific Device Code

= Date Code

= Pb-Free Package

(Pb-Free)

SOT-563

Package

DS(on)

Top View

Publication Order Number:

Typ

4000 / Tape & Reel

8000 / Tape & Reel

MARKING

DIAGRAM

TW M G

Shipping

NTZD3155C/D

-430 mA

(Note 1)

540 mA

Max

†

Related parts for NTZD3155CT1G

NTZD3155CT1G Summary of contents

Page 1

... -750 ° - 150 STG I 350 mA S NTZD3155CT1G °C 260 T L NTZD3155CT2G NTZD3155CT5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com I Max D R Typ ...

Page 2

Thermal Resistance Ratings Parameter Junction-to-Ambient – Steady State (Note 2) Junction-to-Ambient – (Note 2) 2. Surface mounted on FR4 board using pad size (Cu area = 1.127 oz] including traces). ...

Page 3

ELECTRICAL CHARACTERISTICS (T Parameter Symbol CHARGES, CAPACITANCES AND GATE RESISTANCE Total Gate Charge Q Threshold Gate Charge Q Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Q Threshold Gate Charge Q Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS ( (Note ...

Page 4

N-CHANNEL TYPICAL PERFORMANCE CURVES 1.2 5.5 V 1 0 1.0 ...

Page 5

N-CHANNEL TYPICAL PERFORMANCE CURVES 200 150 100 OSS DRAIN-T O-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 100 ...

Page 6

P-CHANNEL TYPICAL PERFORMANCE CURVES 25° -1 0.6 -1.4 V 0.4 -1 ...

Page 7

P-CHANNEL TYPICAL PERFORMANCE CURVES 250 200 C 150 ISS 100 C OSS 50 C RSS DRAIN-T O-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 100 t d(OFF ...

Page 8

... Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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