MMDF2P02HDR2G ON Semiconductor, MMDF2P02HDR2G Datasheet

MMDF2P02HDR2G

Manufacturer Part Number

MMDF2P02HDR2G

Description

MOSFET P-CH DUAL 3.3A 20V 8SOIC

Manufacturer

ON Semiconductor

Datasheet

1.MMDF2P02HDR2.pdf (8 pages)

Specifications of MMDF2P02HDR2G

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

160 mOhm @ 2A, 10V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

3.3A

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

20nC @ 10V

Input Capacitance (ciss) @ Vds

588pF @ 16V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

MMDF2P02HDR2GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MMDF2P02HDR2G

Quantity:

172

Company:

Meier Automation Equipment Co., Limited

Part Number:

MMDF2P02HDR2G

Manufacturer:

ON/安森美

Quantity:

20 000

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MMDF2P02HD

Power MOSFET

2 Amps, 20 Volts

P−Channel SO−8, Dual

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain−to−source diode has a very low reverse recovery time.

MiniMOSt devices are designed for use in low voltage, high speed

switching applications where power efficiency is important. Typical

applications are dc−dc converters, and power management in portable

and battery powered products such as computers, printers, cellular and

cordless phones. They can also be used for low voltage motor controls

in mass storage products such as disk drives and tape drives. The

avalanche energy is specified to eliminate the guesswork in designs

where inductive loads are switched and offer additional safety margin

against unexpected voltage transients.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Negative sign for P−Channel device omitted for clarity.

2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with

February, 2006 − Rev. 7

MAXIMUM RATINGS

Drain−to−Source Voltage

Drain−to−Gate Voltage (R

Gate−to−Source Voltage − Continuous

Drain Current − Continuous @ T

Drain Current

Total Power Dissipation, T

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

L = 18 mH, R

Thermal Resistance, Junction−to−Ambient

(Note 2)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

These miniature surface mount MOSFETs feature ultra low R

Ultra Low R

Logic Level Gate Drive − Can Be Driven by Logic ICs

Miniature SO−8 Surface Mount Package − Saves Board Space

Diode Is Characterized for Use In Bridge Circuits

Diode Exhibits High Speed, With Soft Recovery

Avalanche Energy Specified

Mounting Information for SO−8 Package Provided

Pb−Free Package is Available

one die operating, 10 sec. max.

DSS

= 5.0 Vdc, I

Specified at Elevated Temperature

− Continuous @ T

− Single Pulse (t

DS(on)

= 25 W)

= 6.0 Apk,

Rating

= 25°C (V

Provides Higher Efficiency and Extends Battery Life

= 25°C (Note 2)

= 25°C unless otherwise noted) (Note 1)

= 1.0 MW)

Preferred Device

≤ 10 ms)

= 25°C

= 100°C

= 20 Vdc,

Symbol

DGR

, T

DSS

qJA

stg

− 55 to 150

Value

± 20

62.5

324

260

3.3

2.1

2.0

DS(on)

°C/W

Unit

Vdc

Adc

Apk

°C

†For information on tape and reel specifications,

Preferred devices are recommended choices for future use

and best overall value.

MMDF2P02HDR2

MMDF2P02HDR2G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Device

(Note: Microdot may be in either location)

Source−1

Source−2

2 AMPERES, 20 VOLTS

Gate−1

Gate−2

ORDERING INFORMATION

D2P02 = Device Code

DS(on)

http://onsemi.com

PIN ASSIGNMENT

SO−8, DUAL

= Assembly Location

= Year

= Work Week

= Pb−Free Package

CASE 751

STYLE 11

P−Channel

(Pb−Free)

Package

SO−8

= 160 mW

Publication Order Number:

2500 Tape & Reel

MMDF2P02HD/D

Drain−1

Drain−2

MARKING

DIAGRAM

Shipping

AYWWG

D2P02

†

Related parts for MMDF2P02HDR2G

MMDF2P02HDR2G Summary of contents

Page 1

... R qJA MMDF2P02HDR2 °C T 260 L MMDF2P02HDR2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage = 250 mAdc Vdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc, ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 4 3 3 2 0.2 0.4 0.6 0 ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

... RR Compared to ON Semiconductor standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter t reverse recovery characteristic. The softness advantage of the high cell density diode means they can be forced through ...

Page 6

The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (T ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1.0E−05 1.0E−04 1.0E− MMDF2P02HD Normalized to qja at 10s. 0.0175 W 0.0710 W Chip 0.0154 F 0.0854 F 1.0E−02 1.0E−01 ...

Page 8

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MiniMOS are trademarks of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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