MOSFET PWR N-CH DL 6A 20V 8SOIC

 

NTMD6N02R2G

Manufacturer Part NumberNTMD6N02R2G
DescriptionMOSFET PWR N-CH DL 6A 20V 8SOIC
ManufacturerON Semiconductor
NTMD6N02R2G datasheets
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Specifications of NTMD6N02R2G

Fet Type2 N-Channel (Dual)Fet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs35 mOhm @ 6A, 4.5VDrain To Source Voltage (vdss)20V
Current - Continuous Drain (id) @ 25° C3.92AVgs(th) (max) @ Id1.2V @ 250µA
Gate Charge (qg) @ Vgs20nC @ 4.5VInput Capacitance (ciss) @ Vds1100pF @ 16V
Power - Max730mWMounting TypeSurface Mount
Package / Case8-SOIC (3.9mm Width)ConfigurationDual Dual Drain
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.035 Ohms
Forward Transconductance Gfs (max / Min)10 SDrain-source Breakdown Voltage20 V
Gate-source Breakdown Voltage+/- 12 VContinuous Drain Current5.07 A
Power Dissipation2 WMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesNTMD6N02R2GOS
NTMD6N02R2 PDF datasheetNTMD6N02R2_PRODUCT_CHANGE PDF datasheet #2
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NTMD6N02R2
Power MOSFET
6.0 Amps, 20 Volts
N−Channel Enhancement Mode
Dual SO−8 Package
Features
•
Ultra Low R
DS(on)
•
Higher Efficiency Extending Battery Life
•
Logic Level Gate Drive
•
Miniature Dual SOIC−8 Surface Mount Package
•
Diode Exhibits High Speed, Soft Recovery
•
Avalanche Energy Specified
•
SOIC−8 Mounting Information Provided
•
Pb−Free Package is Available
Applications
•
DC−DC Converters
•
Low Voltage Motor Control
•
Power Management in Portable and Battery−Powered Products,
for example, Computers, Printers, Cellular and Cordless Telephones
and PCMCIA Cards
MAXIMUM RATINGS
(T
= 25°C unless otherwise noted)
J
Rating
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
= 1.0 MW)
GS
Gate−to−Source Voltage − Continuous
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
= 25°C
A
Continuous Drain Current @ T
= 25°C
A
Continuous Drain Current @ T
= 70°C
A
Pulsed Drain Current (Note 4)
Thermal Resistance,
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
= 25°C
A
Continuous Drain Current @ T
= 25°C
A
Continuous Drain Current @ T
= 70°C
A
Pulsed Drain Current (Note 4)
Thermal Resistance
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T
= 25°C
A
Continuous Drain Current @ T
= 25°C
A
Continuous Drain Current @ T
= 70°C
A
Pulsed Drain Current (Note 4)
1. Mounted onto a 2 in square FR−4 Board
(1 in sq. 2 oz. Cu 0.06 in thick single sided), t < 10 seconds.
2. Mounted onto a 2 in square FR−4 Board
(1 in sq. 2 oz. Cu 0.06 in thick single sided), t = steady state.
3. Minimum FR−4 or G−10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 3
Symbol
Value
Unit
V
20
V
DSS
V
20
V
DGR
"12
V
V
GS
°C/W
62.5
R
qJA
P
2.0
W
D
I
6.5
A
D
I
5.5
A
D
I
50
A
DM
°C/W
102
R
qJA
P
1.22
W
D
I
5.07
A
D
I
4.07
A
D
I
40
A
DM
°C/W
R
172
qJA
0.73
W
P
D
I
3.92
A
D
I
3.14
A
D
NTMD6N02R2
I
30
A
DM
NTMD6N02R2G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
http://onsemi.com
V
R
TYP
I
MAX
DSS
DS(ON)
D
20 V
35 mW @ V
= 4.5 V
6.0 A
GS
N−Channel
D
G
S
SOIC−8
8
CASE 751
1
STYLE 11
MARKING DIAGRAM
& PIN ASSIGNMENT
1
8
Source 1
Drain 1
2
7
Gate 1
Drain 1
3
6
Source 2
Drain 2
4
5
Drain 2
Gate 2
(Top View)
E6N02 = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
SOIC−8
2500/Tape & Reel
SOIC−8
2500/Tape & Reel
(Pb−Free)
Publication Order Number:
NTMD6N02R2/D
†

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NTMD6N02R2G Summary of contents

  • Page 1

    ... °C/W R 172 qJA NTMD6N02R2 NTMD6N02R2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com V R TYP I MAX DSS DS(ON 4 N−Channel SOIC−8 8 CASE 751 ...

  • Page 2

    MAXIMUM RATINGS (T = 25°C unless otherwise noted) (continued) J Rating Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting Vdc 5.0 Vdc, Peak Maximum Lead Temperature for ...

  • Page 3

    ELECTRICAL CHARACTERISTICS (T Characteristic BODY−DRAIN DIODE RATINGS (Note 9) Diode Forward On−Voltage (I Reverse Recovery Time Reverse Recovery Stored Charge 8. Handling precautions to protect against electrostatic discharge is mandatory. 9. Indicates Pulse Test: Pulse Width = 300 ms max, ...

  • Page 4

    1.2 1 0.8 0.6 −50 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature 2500 ...

  • Page 5

    DRAIN−TO−SOURCE DIODE CHARACTERISTICS 25° 0.2 0.4 0.6 0 SOURCE−TO−DRAIN VOLTAGE (VOLTS) SD Figure 10. Diode Forward Voltage versus Current I S Figure 12. ...

  • Page 6

    ... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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