MMDF2P02ER2G ON Semiconductor, MMDF2P02ER2G Datasheet - Page 2

• Manufacturer Part Number: MMDF2P02ER2G
• Description: MOSFET PWR P-CH 25V 2.5A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of MMDF2P02ER2G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 475pF @ 16V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Negative sign for P−Channel device omitted for clarity.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
SOURCE−DRAIN DIODE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 4)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 5)
Drain−to−Source Breakdown Voltage
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage
Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance
Forward Transconductance (V
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Forward On−Voltage (Note 4)
Reverse Recovery Time
See Figure 11
Reverse Recovery Storage Charge
(V
(V
(V
(V
(V
(V
GS
DS
DS
DS
GS
GS
= 0 Vdc, I
= 20 Vdc, V
= 20 Vdc, V
= V
= 10 Vdc, I
= 4.5 Vdc, I
GS
, I
D
D
= 250 mAdc)
D
D
= 250 mAdc)
GS
GS
= 2.0 Adc)
= 1.0 Adc)
= 0 Vdc)
= 0 Vdc, T
DS
GS
Characteristic
= 3.0 Vdc, I
J
= ± 20 Vdc, V
= 125°C)
(T
A
D
(V
(V
(V
(V
= 25°C unless otherwise noted) (Note 3)
V
(I
(I
V
= 1.0 Adc)
GS
S
S
DS
DD
DD
GS
DS
DS
= 2.0 Adc, V
= 2.0 Adc, V
= 16 Vdc, V
= 5.0 Vdc, R
dI
= 16 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, R
= 0)
V
S
f = 1.0 MHz)
GS
/dt = 100 A/ms)
= 10 Vdc)
http://onsemi.com
MMDF2P02E
GS
GS
D
D
D
GS
G
G
= 2.0 Adc,
= 2.0 Adc,
= 2.0 Adc,
= 0 Vdc)
= 6.0 W)
= 0 Vdc,
= 6.0 W)
= 0 Vdc,
2
V
Symbol
R
V
(BR)DSS
t
t
t
t
I
I
C
Q
DS(on)
C
V
GS(th)
C
g
d(on)
d(off)
d(on)
d(off)
DSS
GSS
Q
Q
Q
Q
t
t
t
FS
oss
t
t
t
t
SD
rss
RR
iss
rr
a
b
r
f
r
f
T
1
2
3
Min
1.0
1.0
25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.035
0.19
Typ
340
220
2.2
2.0
3.8
0.3
2.8
1.0
3.5
3.0
1.5
75
20
40
53
41
13
29
30
28
10
32
19
12
−
−
−
−
Max
0.25
100
475
300
150
106
1.0
3.0
0.4
2.0
10
40
80
82
26
58
60
56
15
64
−
−
−
−
−
−
−
−
−
−
mV/°C
Mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
nC
mC
pF
ns
ns
W