MMDF2P02ER2G ON Semiconductor, MMDF2P02ER2G Datasheet - Page 6

• Manufacturer Part Number: MMDF2P02ER2G
• Description: MOSFET PWR P-CH 25V 2.5A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of MMDF2P02ER2G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 475pF @ 16V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
100
0.1
10
1
0.1
0.001
0.01
0.1
Figure 12. Maximum Rated Forward Biased
10
1.0E−05
V
SINGLE PULSE
T
1
GS
C
= 25°C
= 20 V
V
DS
D = 0.5
0.05
0.02
0.01
0.1
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
SINGLE PULSE
0.2
R
THERMAL LIMIT
PACKAGE LIMIT
Safe Operating Area
DS(on)
1.0E−04
1
Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″
thick single sided) with one die operating, 10s max.
dc
LIMIT
10 ms
1.0E−03
TYPICAL ELECTRICAL CHARACTERISTICS
100 ms
Figure 15. Diode Reverse Recovery Waveform
I
S
10
10 ms
t
p
1.0E−02
Figure 14. Thermal Response
http://onsemi.com
MMDF2P02E
di/dt
100
t
a
t, TIME (s)
Chip
6
t
1.0E−01
rr
t
b
I
S
280
240
200
160
120
0.0175 W
0.0154 F
0.25 I
80
40
0
25
Figure 13. Maximum Avalanche Energy versus
S
1.0E+00
0.0854 F
0.0710 W
T
Starting Junction Temperature
J
50
, STARTING JUNCTION TEMPERATURE (°C)
Normalized to qja at 10s.
TIME
0.2706 W
0.3074 F
75
1.0E+01
1.7891 F
0.5776 W
100
1.0E+02
0.7086 W
107.55 F
125
Ambient
I pk = 7 A
1.0E+03
150