MOSFET N-CH 20V 1A SOT323

 

DMG1012UW-7

Manufacturer Part NumberDMG1012UW-7
DescriptionMOSFET N-CH 20V 1A SOT323
ManufacturerDiodes Inc
DMG1012UW-7 datasheets

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Specifications of DMG1012UW-7

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs450 mOhm @ 600mA, 4.5VDrain To Source Voltage (vdss)20V
Current - Continuous Drain (id) @ 25° C1AVgs(th) (max) @ Id1V @ 250µA
Gate Charge (qg) @ Vgs0.74nC @ 4.5VInput Capacitance (ciss) @ Vds60.67pF @ 16V
Power - Max290mWMounting TypeSurface Mount
Package / CaseSC-70-3, SOT-323-3Transistor PolarityN-Channel
Resistance Drain-source Rds (on)0.5 OhmsDrain-source Breakdown Voltage20 V
Continuous Drain Current1 APower Dissipation0.29 W
Maximum Operating Temperature- 55 CMounting StyleSMD/SMT
Minimum Operating Temperature+ 150 CLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesDMG1012UW-7DITR  
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Electrical Characteristics
@T
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
= 25°C
J
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
1.5
V
= 8.0V
GS
V
= 4.5V
GS
1.2
V
= 3.0V
GS
V
= 2.5V
GS
V
= 2.0V
GS
0.9
0.6
0.3
0
0
1
2
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Characteristics
DMG1012UW
Document number: DS31859 Rev. 3 - 2
= 25°C unless otherwise specified
A
Symbol
Min
Typ
20
-
BV
DSS
-
-
I
DSS
-
-
I
GSS
0.5
-
V
GS(th)
0.3
R
-
0.4
DS (ON)
0.5
|Y
|
-
1.4
fs
0.7
V
SD
-
60.67
C
iss
-
9.68
C
oss
-
5.37
C
rss
-
736.6
Q
g
-
93.6
Q
gs
-
116.6
Q
gd
5.1
-
t
D(on)
7.4
t
-
r
26.7
-
t
D(off)
12.3
t
-
f
1.5
1.2
0.9
0.6
V
= 1.5V
GS
0.3
V
= 1.2V
GS
0
3
4
5
0
2 of 6
www.diodes.com
DMG1012UW
Max
Unit
Test Condition
-
V
V
= 0V, I
= 250μA
GS
D
100
nA
V
= 20V, V
= 0V
DS
GS
μA
±1.0
V
= ±4.5V, V
= 0V
GS
DS
1.0
V
V
= V
, I
= 250μA
DS
GS
D
0.45
V
= 4.5V, I
= 600mA
GS
D
Ω
0.6
V
= 2.5V, I
= 500mA
GS
D
0.75
V
= 1.8V, I
= 350mA
GS
D
-
S
V
= 10V, I
= 400mA
DS
D
1.2
V
V
= 0V, I
= 150mA
GS
S
-
pF
V
= 16V, V
= 0V,
DS
GS
-
pF
f = 1.0MHz
-
pF
-
pC
V
= 4.5V, V
= 10V,
GS
DS
-
pC
I
= 250mA
D
-
pC
-
ns
V
= 10V, V
= 4.5V,
DD
GS
-
ns
R
= 47Ω, R
= 10Ω,
L
G
-
ns
I
= 200mA
D
-
ns
V
= 5V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0.5
1
1.5
2
2.5
V
, GATE SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
October 2009
© Diodes Incorporated
3

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