MOSFET N-CH 20V 1A SOT323

 

DMG1012UW-7

Manufacturer Part NumberDMG1012UW-7
DescriptionMOSFET N-CH 20V 1A SOT323
ManufacturerDiodes Inc
DMG1012UW-7 datasheets

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Specifications of DMG1012UW-7

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs450 mOhm @ 600mA, 4.5VDrain To Source Voltage (vdss)20V
Current - Continuous Drain (id) @ 25° C1AVgs(th) (max) @ Id1V @ 250µA
Gate Charge (qg) @ Vgs0.74nC @ 4.5VInput Capacitance (ciss) @ Vds60.67pF @ 16V
Power - Max290mWMounting TypeSurface Mount
Package / CaseSC-70-3, SOT-323-3Transistor PolarityN-Channel
Resistance Drain-source Rds (on)0.5 OhmsDrain-source Breakdown Voltage20 V
Continuous Drain Current1 APower Dissipation0.29 W
Maximum Operating Temperature- 55 CMounting StyleSMD/SMT
Minimum Operating Temperature+ 150 CLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesDMG1012UW-7DITR  
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100
C
iss
10
C
oss
C
rss
1
0
5
10
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Capacitance
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
Ordering Information
(Note 7)
Part Number
DMG1012UW-7
Notes:
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year
2009
Code
W
Month
Jan
Feb
Code
1
2
DMG1012UW
Document number: DS31859 Rev. 3 - 2
1,000
100
10
1
15
20
D = 0.9
0.001
0.01
0.1
1
t , PULSE DURATION TIME (s)
1
Fig. 11 Transient Thermal Response
Case
SOT-323
NA1 = Product Type Marking Code
YM = Date Code Marking
NA1
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
2010
2011
2012
X
Y
Z
Mar
Apr
May
Jun
Jul
3
4
5
6
7
4 of 6
www.diodes.com
DMG1012UW
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
0
4
8
12
16
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
R
(t) = r(t) *
R
θJA
θ
JA
R
= 486°C/W
θ
JA
P(pk)
t
1
t
2
T - T = P * R
(t)
θ
J
A
JA
Duty Cycle, D = t /t
1 2
10
100
1,000
Packaging
3000 / Tape & Reel
2013
2014
A
B
Aug
Sep
Oct
Nov
8
9
O
N
October 2009
© Diodes Incorporated
20
2015
C
Dec
D

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