MOSFET P-CH 20V 830MA SC89-3

FDY102PZ

Manufacturer Part NumberFDY102PZ
DescriptionMOSFET P-CH 20V 830MA SC89-3
ManufacturerFairchild Semiconductor
SeriesPowerTrench®
FDY102PZ datasheet
 


Specifications of FDY102PZ

Fet TypeMOSFET P-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs500 mOhm @ 830mA, 4.5VDrain To Source Voltage (vdss)20V
Current - Continuous Drain (id) @ 25° C830mAVgs(th) (max) @ Id1V @ 250µA
Gate Charge (qg) @ Vgs3.1nC @ 4.5VInput Capacitance (ciss) @ Vds135pF @ 10V
Power - Max446mWMounting TypeSurface Mount
Package / CaseSC-89-3ConfigurationSingle
Transistor PolarityP-ChannelResistance Drain-source Rds (on)0.5 Ohm @ 4.5 V
Drain-source Breakdown Voltage20 VGate-source Breakdown Voltage+/- 8 V
Continuous Drain Current0.83 APower Dissipation625 mW
Maximum Operating Temperature+ 150 CMounting StyleSMD/SMT
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesFDY102PZTR  
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FDY102PZ
Single P-Channel (
–20 V, –0.83 A, 0.5 :
Features
„ Max r
= 0.5 : at V
= –4.5 V, I
DS(on)
GS
„ Max r
= 0.7 : at V
= –2.5 V, I
DS(on)
GS
„ Max r
= 1.2 : at V
= –1.8 V, I
DS(on)
GS
„ Max r
= 1.8 : at V
= –1.5 V, I
DS(on)
GS
„ HBM ESD protection level = 1400 V (Note 3)
„ RoHS Compliant
S
D
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DS
V
Gate to Source Voltage
GS
Drain Current -Continuous
I
D
-Pulsed
Power Dissipation
P
D
Power Dissipation
T
, T
Operating and Storage Junction Temperature Range
J
STG
Thermal Characteristics
R
Thermal Resistance, Junction to Ambient
TJA
R
Thermal Resistance, Junction to Ambient
TJA
Package Marking and Ordering Information
Device Marking
Device
E
FDY102PZ
©2010 Fairchild Semiconductor Corporation
FDY102PZ Rev.B2
1.5 V) Specified PowerTrench
General Description
= –0.83 A
This Single P-Channel MOSFET has been designed using
D
Fairchild Semiconductor’s advanced Power Trench process to
= –0.70 A
D
optimize the r
= –0.43 A
D
= –0.36 A
D
Application
„ Li-Ion Battery Pack
G
SC89-3
T
= 25 °C unless otherwise noted
A
Parameter
Package
SC89-3
1
February 2010
®
MOSFET
@V
= –1.5 V.
DS(on)
GS
G
1
3
D
S
2
Ratings
–20
±8
(Note 1a)
–0.83
–1.0
(Note 1a)
0.625
(Note 1b)
0.446
–55 to +150
(Note 1a)
200
(Note 1b)
280
Reel Size
Tape Width
Quantity
7 ”
8 mm
3000 units
www.fairchildsemi.com
tm
Units
V
V
A
W
°C
°C/W

FDY102PZ Summary of contents

  • Page 1

    ... Thermal Resistance, Junction to Ambient TJA Package Marking and Ordering Information Device Marking Device E FDY102PZ ©2010 Fairchild Semiconductor Corporation FDY102PZ Rev.B2 1.5 V) Specified PowerTrench General Description = –0.83 A This Single P-Channel MOSFET has been designed using D Fairchild Semiconductor’s advanced Power Trench process to = –0.70 A ...

  • Page 2

    ... TJA user's board design. 2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDY102PZ Rev. °C unless otherwise noted J Test Conditions = – ...

  • Page 3

    ... DUTY CYCLE = 0.5% MAX 0 0 125 C J 0.4 0.2 0.0 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDY102PZ Rev. °C unless otherwise noted J 4.5 4 3.0 2.5 2.0 1 1.0 0.5 1.5 2.0 2.0 1.6 1.2 ...

  • Page 4

    ... 125 GATE TO SOURCE VOLTAGE ( Figure 9. Gate Leakage Current vs Gate to Source Voltage -4 0 Figure 11. Single Pulse Maximum Power Dissipation ©2010 Fairchild Semiconductor Corporation FDY102PZ Rev. °C unless otherwise noted J 500 100 0.1 2.0 2 PULSE WIDTH (sec iss C oss C rss ...

  • Page 5

    ... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE R 0. Figure 12. ©2010 Fairchild Semiconductor Corporation FDY102PZ Rev. °C unless otherwise noted 280 C RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK TJA ...

  • Page 6

    ... Dimensional Outline and Pad Layout 1.70 1.50 3 0.98 0.78 1 (0.15) 0.43 0.28 ©2010 Fairchild Semiconductor Corporation FDY102PZ Rev.B2 0.35 0.25 1.70 1.14 1.50 2 0.50 0.50 LAND PATTERN RECOMMENDATION 1.00 0.78 0.58 SEE DETAIL A 0.54 0.34 0.10 0.00 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD ...

  • Page 7

    ... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDY102PZ Rev.B2 ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ® Green FPS™ e-Series™ ...