FDY100PZ Fairchild Semiconductor, FDY100PZ Datasheet - Page 2

MOSFET P-CH 20V 350MA SC-89

FDY100PZ

Manufacturer Part Number
FDY100PZ
Description
MOSFET P-CH 20V 350MA SC-89
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDY100PZ

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.2 Ohm @ 350mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
350mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
100pF @ 10V
Power - Max
446mW
Mounting Type
Surface Mount
Package / Case
SC-89-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
1.2 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
1 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.35 A
Power Dissipation
625 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
350mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
1.2ohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDY100PZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDY100PZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDY100PZ-NL
Manufacturer:
ON/安森美
Quantity:
20 000
Change To
Results/Discussion for Qual Plan NumberQ20080344
Test: (Autoclave)
Lot
Q20080344AAACLV
Q20080344BAACLV
Q20080344CAACLV
Test: (High Temperature Gate Bias)
Lot
Q20080344AAHTGB
Device
FDY2000PZ
Device
FDY2000PZ
FDY300NZ
FDY4000CZ
168-HOURS
96-HOURS
0/79
0/79
0/79
500-HOURS
0/79
1000-HOURS
0/79
Failure Code
Failure Code
Pg. 2

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